參數(shù)資料
型號: FDC6020C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Complementary PowerTrench MOSFET
中文描述: 5.9 A, 20 V, 0.027 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, FLMP, SUPERSOT-6
文件頁數(shù): 3/9頁
文件大?。?/td> 211K
代理商: FDC6020C
FDC6020C RevB (W)
Electrical Characteristics
(continued)
Symbol
Parameter
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
T
A
= 25°C unless otherwise noted
Test Conditions
Type
Min
Typ Max Units
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
–1.3
1.3
–1.2
1.2
A
V
nS
nC
V
SD
Drain-Source Diode Forward
Voltage
Diode Reverse Recovery
Time
Diode Reverse Recovery
Charge
V
GS
= 0 V,
V
GS
= 0 V,
I
F
= – 4.2A,d
IF
/d
t
= 100 A/
μ
s
I
F
= 5.9A, d
IF
/d
t
= 100 A/
μ
s
I
F
= – 4.2A,d
IF
/d
t
= 100 A/
μ
s
I
F
= 5.9A, d
IF
/d
t
= 100 A/
μ
s
I
S
= –1.3 A
(Note 2)
I
S
= 1.3 A
(Note 2)
–0.8
0.7
17
15
6
4
t
rr
Q
rr
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a)
68°C/W when
mounted on a 1in
2
pad
of 2 oz copper (Single
Operation).
b)
102°C/W when mounted
on a minimum pad of 2 oz
copper (Single Operation).
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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