參數(shù)資料
型號(hào)： FDC6020C
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Complementary PowerTrench MOSFET
中文描述： 5.9 A, 20 V, 0.027 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, FLMP, SUPERSOT-6
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 211K
代理商： FDC6020C
FDC6020C RevB (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Type
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
BV
DSS
T
J
Temperature Coefficient
I
DSS
Zero Gate Voltage Drain
Current
I
GSS
Gate-Body Leakage
V
GS
= 0 V,
V
GS
= 0 V,
I
D
= –250 μA, Referenced to 25
°
C
I
D
= 250 μA, Referenced to 25
°
C
V
DS
= –16 V,
V
DS
= 16 V,
V
GS
= +12 V,
V
GS
= +12 V,
I
D
= –250 μA
I
D
= 250 μA
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
–20
20
V
Breakdown Voltage
–14
12
mV/
°
C
μ
A
V
GS
= 0 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
–1
1
+100
+100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
(Note 2)
V
DS
= V
GS
,
V
DS
= V
GS
,
I
D
= –250 μA, Referenced to 25
°
C
I
D
= 250 μA, Referenced to 25
°
C
V
GS
= –4.5 V,
V
GS
= –2.5 V,
V
GS
= –4.5 V, I
D
= –4.2 A,T
J
=125
°
C
V
GS
= 4.5 V,
V
GS
= 2.5 V,
V
GS
= 4.5 V, I
D
= 5.9 A, T
J
= 125
°
C
V
DS
= –5 V,
V
DS
= 5 V,
I
D
= –250 μA
I
D
= 250 μA
Q1
Q2
Q1
Q2
Q1
Q2
–0.6
0.6
–1.0
1.0
3
–3
45
65
58
23
33
31
13
23
–1.5
1.5
V
V
GS(th)
T
J
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
mV/
°
C
m
I
D
= –4.2 A
I
D
= –3.4 A
55
82
73
27
39
39
I
D
= 5.9 A
I
D
= 4.9 A
g
FS
Forward Transconductance
I
D
= – 4.2 A
I
D
= 5.9 A
Q1
Q2
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
753
677
163
171
83
91
8
2.2
pF
pF
pF
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Q1:
V
DS
= –10 V, V
GS
= 0 V,
f = 1.0 MHz
Q2:
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
V
GS
=
15mV,
R
G
Gate Resistance
f = 1.0 MHz
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
13
11
8
16
26
18
14
7
7
6
1.6
1.5
1.9
1.8
23
20
16
29
42
32
52
14
10
8
ns
ns
ns
ns
nC
nC
nC
Q1:
V
DD
= –10 V,
V
GS
= –4.5 V,
Q2:
V
DD
= 10 V,
V
GS
= 4.5V,
I
D
= –1 A,
R
GEN
= 6
I
D
= 1 A,
R
GEN
= 6
Q1:
V
DS
= –10 V,I
D
= –4.2 A,V
GS
= –4.5V
Q2:
V
DS
= 10 V, I
D
= 5.9 A,V
GS
= 4.5 V
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDC6020C_F077 功能描述:MOSFET Complementary PwrTrh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDC60-24D05 制造商:ASTRODYNE 制造商全稱:Astrodyne Corporation 功能描述:Isolated and Regulated 60 WATT Modular DC/DC Converters
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