參數(shù)資料
型號(hào)： FDB070AN06A0
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench MOSFET 60V, 80A, 7m
中文描述： 15 A, 60 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁數(shù)： 2/12頁
文件大?。?/td> 599K
代理商： FDB070AN06A0
2003 Fairchild Semiconductor Corporation
FDB070AN06A0 / FDP070AN06A0 Rev. B
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
= 25°C, L = 93
μ
H, I
AS
= 64A.
2:
Pulse width = 100s.
Device Marking
FDB070AN06A0
FDP070AN06A0
Device
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
FDB070AN06A0
FDP070AN06A0
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
B
VDSS
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 50V
V
GS
= 0V
V
GS
=
±
20V
60
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
V
GS(TH)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 80A, V
GS
= 10V
I
D
= 80A, V
GS
= 10V,
T
J
= 175
o
C
2
-
-
4
V
r
DS(ON)
Drain to Source On Resistance
0.0061
0.007
-
0.0127
0.015
C
ISS
C
OSS
C
RSS
Q
g(TOT)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
3000
510
230
51
5.4
17
11.6
16
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 2V
V
DD
= 30V
I
D
= 80A
I
g
= 1.0mA
66
7
-
-
-
-
-
-
-
V
DD
= 30V, I
D
= 80A
V
GS
= 10V, R
GS
= 5.6
-
-
-
-
-
-
-
256
-
-
-
-
93
ns
ns
ns
ns
ns
ns
12
159
27
35
-
V
SD
Source to Drain Diode Voltage
I
SD
= 80A
I
SD
= 40A
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
I
SD
= 75A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
34
35
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDB070AN06A0 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDB070AN06A0_F085 功能描述:MOSFET N-CHANNEL POWERTRENCH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB070AN06A0_Q 功能描述:MOSFET N-Channel PT 6V 8A 7mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB075N15A 功能描述:MOSFET 150V N-Channel PowerTrench MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDB075N15A_F085 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
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