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參數(shù)資料
| 型號(hào)： | FDB12N50 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel MOSFET 500V, 11.5A, 0.65ヘ |
| 中文描述： | N溝道MOSFET的500V，11.5A，0.65ヘ |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 311K |
| 代理商： | FDB12N50 |
tm
June 2007
UniFET
F
2007 Fairchild Semiconductor Corporation
FDB12N50
TM
Rev. A
1
www.fairchildsemi.com
1
TM
FDB12N5
0TM
N-Channel MOSFET
500V, 11.5A, 0.65
Ω
Features
R
DS(on)
= 0.55
Ω
( Typ.)@ V
GS
= 10V, I
D
= 6A
Low gate charge ( Typ. 22nC)
Low C
rss
( Typ. 12pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
S
D
2
-PAK
FDB Series
G
S
I
2
-PAK
FDI Series
G
S
D
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
V
GSS
Parameter
Ratings
500
±30
11.5
6.9
46
456
11.5
16.7
4.5
165
1.33
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
I
D
Drain Current
-Continuous (T
C
= 25
o
C)
-Continuous (T
C
= 100
o
C)
A
I
DM
E
AS
I
AR
E
AR
dv/dt
Drain Current - Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
(T
C
= 25
o
C)
- Derate above 25
o
C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
A
mJ
A
mJ
V/ns
W
W/
o
C
o
C
P
D
Power Dissipation
T
J
, T
STG
T
L
300
o
C
Symbol
Parameter
Ratings
Units
R
θ
JC
R
θ
JA
*
R
θ
JA
*When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction to Case
0.75
o
C/W
Thermal Resistance, Junction to Ambient*
40
Thermal Resistance, Junction to Ambient
62.5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDB12N50F | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 11.5A, 0.7ヘ |
| FDB12N50F_12 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel MOSFET, FRFET 500V, 11.5A, 0.7?? |
| FDB12N50FTM | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FDB12N50FTM_WS | 功能描述:MOSFET 500V 11.5A 0.7Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDB12N50TM | 功能描述:MOSFET 500V N-CH MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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