參數(shù)資料
型號: FDI12N50TU
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel MOSFET 500V, 11.5A, 0.65ヘ
中文描述: 11.5 A, 500 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, I2PAK-3
文件頁數(shù): 1/9頁
文件大小: 311K
代理商: FDI12N50TU
tm
June 2007
UniFET
F
2007 Fairchild Semiconductor Corporation
FDB12N50
TM
Rev. A
1
www.fairchildsemi.com
1
TM
FDB12N5
0TM
N-Channel MOSFET
500V, 11.5A, 0.65
Ω
Features
R
DS(on)
= 0.55
Ω
( Typ.)@ V
GS
= 10V, I
D
= 6A
Low gate charge ( Typ. 22nC)
Low C
rss
( Typ. 12pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
S
D
2
-PAK
FDB Series
G
S
I
2
-PAK
FDI Series
G
S
D
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
V
GSS
Parameter
Ratings
500
±30
11.5
6.9
46
456
11.5
16.7
4.5
165
1.33
-55 to +150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
I
D
Drain Current
-Continuous (T
C
= 25
o
C)
-Continuous (T
C
= 100
o
C)
A
I
DM
E
AS
I
AR
E
AR
dv/dt
Drain Current - Pulsed (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
(T
C
= 25
o
C)
- Derate above 25
o
C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
A
mJ
A
mJ
V/ns
W
W/
o
C
o
C
P
D
Power Dissipation
T
J
, T
STG
T
L
300
o
C
Symbol
Parameter
Ratings
Units
R
θ
JC
R
θ
JA
*
R
θ
JA
*When mounted on the minimum pad size recommended (PCB Mount)
Thermal Resistance, Junction to Case
0.75
o
C/W
Thermal Resistance, Junction to Ambient*
40
Thermal Resistance, Junction to Ambient
62.5
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