參數(shù)資料
型號: FCP4N60
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 600V N-Channel MOSFET
中文描述: 3.9 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 758K
代理商: FCP4N60
3
www.fairchildsemi.com
FCP4N60 Rev. A
F
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
2
4
6
8
10
10
-1
10
0
10
1
* Note
1. V
DS
= 40V
2. 250
μ
s Pulse Test
-55
o
C
150
o
C
25
o
C
I
D
V
GS
, Gate-Source Voltage [V]
0.1
1
10
0.1
1
10
V
GS
Top : 15.0 V
10.0 V
8.0V
7.5 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
* Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
10
-1
10
0
10
1
25
o
C
150
o
C
* Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
I
D
V
SD
, Source-Drain Voltage [V]
0.0
2.5
5.0
7.5
10.0
12.5
0
1
2
3
4
V
GS
= 20V
V
GS
= 10V
* Note : T
J
= 25
o
C
R
D
Ω
]
I
D
, Drain Current [A]
10
0
10
1
0
200
400
600
800
1000
1200
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
5
10
15
0
2
4
6
8
10
12
V
DS
= 300V
V
DS
= 480V
V
DS
= 120V
* Note : I
D
= 3.9A
V
G
,
Q
G
, Total Gate Charge [nC]
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