參數(shù)資料
型號： FCP4N60
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 600V N-Channel MOSFET
中文描述： 3.9 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 758K
代理商： FCP4N60
2
www.fairchildsemi.com
FCP4N60 Rev. A
F
Package Marking and Ordering Information
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
AS
= 1.9A, V
DD
= 50V, R
G
= 25
Ω
, Starting T
J
= 25
°
C
3. I
SD
≤
3.9A, di/dt
≤
200A/
μ
s, V
DD
≤
BV
DSS
, Starting T
J
= 25
°
C
4. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FCP4N60
FCP4N60
TO-220
--
--
50
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250
μ
A, T
J
= 25
°
C
V
GS
= 0V, I
D
= 250
μ
A, T
J
= 150
°
C
600
--
--
V
--
650
--
V
Δ
BV
DSS
/
Δ
T
J
BV
DS
Breakdown Voltage Temperature
Coefficient
I
D
= 250
μ
A, Referenced to 25
°
C
--
0.6
--
V/
°
C
Drain-Source Avalanche Breakdown
Voltage
V
GS
= 0V, I
D
= 3.9A
--
700
--
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, T
C
= 125
°
C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
--
--
--
--
1
10
μ
A
μ
A
I
GSSF
I
GSSR
On Characteristics
Gate-Body Leakage Current, Forward
--
--
100
nA
Gate-Body Leakage Current, Reverse
--
--
-100
nA
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
μ
A
3.0
--
5.0
V
Static Drain-Source
On-Resistance
V
GS
= 10V, I
D
= 2.0A
--
1.0
1.2
Ω
g
FS
Dynamic Characteristics
Forward Transconductance
V
DS
= 40V, I
D
= 2.0A
(Note 4)
--
3.2
--
S
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Switching Characteristics
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
--
415
540
pF
Output Capacitance
--
210
275
pF
Reverse Transfer Capacitance
--
19.5
--
pF
Output Capacitance
V
DS
= 480V, V
GS
= 0V, f = 1.0MHz
V
DS
= 0V to 400V, V
GS
= 0V
--
12
16
pF
Effective Output Capacitance
--
32
--
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
Turn-On Delay Time
V
DD
= 300V, I
D
= 3.9A
R
G
= 25
Ω
(Note 4, 5)
--
16
45
ns
Turn-On Rise Time
--
45
100
ns
Turn-Off Delay Time
--
36
85
ns
Turn-Off Fall Time
--
30
70
ns
Total Gate Charge
V
DS
= 480V, I
D
= 3.9A
V
GS
= 10V
(Note 4, 5)
--
12.8
16.6
nC
Gate-Source Charge
--
2.4
--
nC
Gate-Drain Charge
--
7.1
--
nC
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain-Source Diode Forward Current
--
--
3.9
A
Maximum Pulsed Drain-Source Diode Forward Current
--
--
11.7
A
Drain-Source Diode Forward Voltage
V
GS
= 0V, I
S
= 3.9A
V
GS
= 0V, I
S
= 3.9A
dI
F
/dt =100A/
μ
s
(Note 4)
--
--
1.4
V
Reverse Recovery Time
--
277
--
ns
Reverse Recovery Charge
--
2.07
--
μ
C
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