參數(shù)資料
型號(hào)： FCPF16N60
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 600V N-Channel MOSFET
中文描述： 16 A, 600 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁數(shù)： 1/10頁
文件大?。?/td> 351K
代理商： FCPF16N60
2007 Fairchild Semiconductor Corporation
FCP16N60 / FCPF16N60 Rev. B
1
www.fairchildsemi.com
F
March 2007
SuperFET
TM
FCP16N60 / FCPF16N60
600V N-Channel MOSFET
Features
650V @T
J
= 150
°
C
Typ. R
ds(on)
= 0.22
Ω
Ultra low gate charge (typ. Qg=55nC)
Low effective output capacitance (typ. Coss.eff=110pF)
100% avalanche tested
Description
SuperFET
TM
is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
Absolute Maximum Ratings
Thermal Characteristics
TO-220
FCP Series
G
S
D
TO-220F
FCPF Series
G
S
D
D
G
S
Symbol
Parameter
FCP16N60
FCPF16N60
Unit
V
DSS
I
D
Drain-Source Voltage
600
V
Drain Current
- Continuous (T
C
= 25
°
C)
- Continuous (T
C
= 100
°
C)
- Pulsed
16
10.1
16*
10.1*
A
A
I
DM
Drain Current
(Note 1)
48
48*
A
V
GSS
E
AS
I
AR
E
AR
dv/dt
Gate-Source voltage
±
30
V
Single Pulsed Avalanche Energy
(Note 2)
450
mJ
Avalanche Current
(Note 1)
16
A
Repetitive Avalanche Energy
(Note 1)
20.8
mJ
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
P
D
Power Dissipation
(T
C
= 25
°
C)
- Derate above 25
°
C
167
1.33
37.9
0.3
W
W/
°
C
T
J,
T
STG
T
L
Operating and Storage Temperature Range
-55 to +150
°
C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
°
C
Symbol
Parameter
FCP16N60
FCPF16N60
Unit
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
0.75
3.3
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°
C/W
*Drain current limited by maximum junction temperature
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FCPF16N60NT 功能描述:MOSFET SupreMOS 16A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FCPF190N60 功能描述:MOSFET SuperFET2, 190mohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FCPF190N60_F152 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 600V 20.2A TO-220F
FCPF190N60E 功能描述:MOSFET 600V N-CHAN MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FCPF190N60E_F152 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N-CH 600V TO-220-3
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