參數(shù)資料
型號(hào)： EDS5104ABTA-6B
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： RP15 (F) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 15 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 88%
中文描述： 128M X 4 SYNCHRONOUS DRAM, 5 ns, PDSO54
封裝： PLASTIC, TSOP2-54
文件頁(yè)數(shù)： 33/52頁(yè)
文件大小： 564K
代理商： EDS5104ABTA-6B
EDS5104ABTA, EDS5108ABTA, EDS5116ABTA
Preliminary Data Sheet E0250E10 (Ver. 1.0)
33
Write command to Write command interval
1. Same bank, same ROW address: When another write command is executed at the same ROW address of the
same bank as the preceding write command, the second write can be performed after an interval of no less than
1 clock. In the case of burst writes, the second write command has priority.
CLK
Command
DQ
in B3
Address
in B1
in B2
BS
ACT
Row
Column A
WRIT
WRIT
Column B
in A0
in B0
Bank0
Active
Column =A
Write
Column =B
Write
Burst Write Mode
BL = 4
Bank 0
WRITE to WRITE Command Interval (same ROW address in same bank)
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands cannot be
executed; it is necessary to separate the two write commands with a precharge command and a bank active
command.
3. Different bank: When the bank changes, the second write can be performed after an interval of no less than 1
clock, provided that the other bank is in the bank active state. In the case of burst write, the second write
command has priority.
CLK
Command
DQ
in B3
Address
in B1
in B2
BS
ACT
Row 0
Row 1
ACT
WRIT
Column A
in A0
in B0
Bank0
Active
Bank3
Active
Bank0
Write
Bank3
Write
WRIT
Column B
Burst Write Mode
BL = 4
WRITE to WRITE Command Interval (different bank)
相關(guān)PDF資料
PDF描述
EDS5108ABTA-6B 512M bits SDRAM
EDS5104ABTA-75 512M bits SDRAM
EDS5108ABTA-75 512M bits SDRAM
EDS5104ABTA-7A 512M bits SDRAM
EDS5108ABTA-7A 512M bits SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDS5104ABTA-75 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM
EDS5104ABTA-7A 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM
EDS5108ABTA 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM
EDS5108ABTA-6B 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM
EDS5108ABTA-75 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM
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