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參數(shù)資料
| 型號(hào)： | EDS5104ABTA-6B |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | RP15 (F) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 15 Watts Output Power; 1.6kVDC Isolation; UL Certified; Fixed Operating Frequency; Six-Sided Continuous Shield; Standard 50.8 x25.4x10.2mm Package; Efficiency to 88% |
| 中文描述： | 128M X 4 SYNCHRONOUS DRAM, 5 ns, PDSO54 |
| 封裝： | PLASTIC, TSOP2-54 |
| 文件頁數(shù)： | 19/52頁 |
| 文件大?。?/td> | 564K |
| 代理商： | EDS5104ABTA-6B |
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EDS5104ABTA, EDS5108ABTA, EDS5116ABTA
Preliminary Data Sheet E0250E10 (Ver. 1.0)
19
Current state
/CS
/RAS
/CAS
/WE
Address
Command
Operation
Read with auto-
precharge
H
×
×
×
×
DESL
Continue burst to end and
precharge
Continue burst to end and
precharge
ILLEGAL
L
H
H
H
×
NOP
L
H
H
L
×
BST
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
3
Other bank active
ILLEGAL on same bank*
2
ILLEGAL*
3
L
L
H
H
BA, RA
ACT
L
L
H
L
BA, A10
PRE, PALL
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
Write
H
×
×
×
×
DESL
Continue burst to end
L
H
H
H
×
NOP
Continue burst to end
L
H
H
L
×
BST
Burst stop
L
H
L
H
BA, CA, A10
READ/READA
Term burst and New read
L
H
L
L
BA, CA, A10
WRIT/WRITA
Term burst and New write
Other bank active
ILLEGAL on same bank*
3
Term burst write and Precharge*
1
L
L
H
H
BA, RA
ACT
L
L
H
L
BA, A10
PRE, PALL
L
L
L
H
×
REF, SELF
ILLEGAL
Write with auto-
precharge
L
L
L
L
MODE
MRS
ILLEGAL
Continue burst to end and
precharge
Continue burst to end and
precharge
ILLEGAL
H
×
×
×
×
DESL
L
H
H
H
×
NOP
L
H
H
L
×
BST
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
3
Other bank active
ILLEGAL on same bank*
3
ILLEGAL*
3
L
L
H
H
BA, RA
ACT
L
L
H
L
BA, A10
PRE, PALL
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
Refresh (auto-refresh)
H
×
×
×
×
DESL
Enter IDLE after tRC
L
H
H
H
×
NOP
Enter IDLE after tRC
L
H
H
L
×
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
4
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
4
L
L
H
H
BA, RA
ACT
ILLEGAL*
4
L
L
H
L
BA, A10
PRE, PALL
ILLEGAL*
4
L
L
L
H
×
REF, SELF
ILLEGAL
L
L
L
L
MODE
MRS
ILLEGAL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDS5108ABTA-6B | 512M bits SDRAM |
| EDS5104ABTA-75 | 512M bits SDRAM |
| EDS5108ABTA-75 | 512M bits SDRAM |
| EDS5104ABTA-7A | 512M bits SDRAM |
| EDS5108ABTA-7A | 512M bits SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDS5104ABTA-75 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM |
| EDS5104ABTA-7A | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM |
| EDS5108ABTA | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM |
| EDS5108ABTA-6B | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM |
| EDS5108ABTA-75 | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:512M bits SDRAM |
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