參數(shù)資料
型號(hào): EDS2532CABH-1A-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: GT 25C 25#12 PIN PLUG
中文描述: 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
封裝: LEAD FREE, FBGA-90
文件頁(yè)數(shù): 37/48頁(yè)
文件大小: 578K
代理商: EDS2532CABH-1A-E
EDS2532CABH
Data Sheet E0395E40 (Ver. 4.0)
37
DQM Control
The DQM mask the DQ data. The UDQM and LDQM mask the upper and lower bytes of the DQ data, respectively.
The timing of UDQM/LDQM is different during reading and writing.
Reading
When data is read, the output buffer can be controlled by DQM. By setting DQM to Low, the output buffer becomes
Low-Z, enabling data output. By setting DQM to High, the output buffer becomes High-Z, and the corresponding
data is not output. However, internal reading operations continue. The latency of DQM during reading is 2 clocks.
Writing
Input data can be masked by DQM. By setting DQM to Low, data can be written. In addition, when DQM is set to
High, the corresponding data is not written, and the previous data is held. The latency of DQM during writing is 0
clock.
CLK
DQ
out 0
out 1
l
DOD = 2 Latency
out 3
DQM
High-Z
Reading
CLK
DQ
in 0
in 1
l
DID = 0 Latency
in 3
DQM
Writing
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參數(shù)描述
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