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參數(shù)資料
| 型號： | EDS2532CABH-1A-E |
| 廠商： | ELPIDA MEMORY INC |
| 元件分類： | DRAM |
| 英文描述： | GT 25C 25#12 PIN PLUG |
| 中文描述： | 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 |
| 封裝： | LEAD FREE, FBGA-90 |
| 文件頁數(shù)： | 33/48頁 |
| 文件大?。?/td> | 578K |
| 代理商： | EDS2532CABH-1A-E |
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EDS2532CABH
Data Sheet E0395E40 (Ver. 4.0)
33
Read with auto precharge to Write command interval
1. Different bank: When some banks are in the active state, the second write command (another bank) is executed.
However, DQM must be set High so that the output buffer becomes High-Z before data input. The internal auto-
precharge of one bank starts at the next clock of the second command.
CLK
Command
BS
DQ (output)
DQ (input)
CL = 2
CL = 3
READA
WRIT
in B0
in B1
in B2
in B3
BL = 4
bank0
ReadA
bank3
Write
Note: Internal auto-precharge starts at the timing indicated by " ".
DQM
High-Z
Read with Auto Precharge to Write Command Interval (Different bank)
2. Same bank: The consecutive write command from read with auto precharge (the same bank) is illegal. It is
necessary to separate the two commands with a bank active command.
Write with auto precharge to Read command interval
1. Different bank: When some banks are in the active state, the second read command (another bank) is executed.
However, in case of a burst write, data will continue to be written until one clock before the read command is
executed. The internal auto-precharge of one bank starts at 2 clocks later from the second command.
CLK
Command
BS
DQ (output)
DQ (input)
WRITA
READ
out B0
out B1
out B2
out B3
CL = 3
BL = 4
bank0
WriteA
bank3
Read
Note: Internal auto-precharge starts at the timing indicated by " ".
DQM
in A0
Write with Auto Precharge to Read Command Interval (Different bank)
2. Same bank: The consecutive read command from write with auto precharge (the same bank) is illegal. It is
necessary to separate the two commands with a bank active command.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EDS2532CABH-1AL-E | GT 5C 3#4 2#16 PIN PLUG |
| EDS2532AABH-75 | 71-580584-09S |
| EDS2532AABH-75-E | GT 3C 3#0 PIN PLUG |
| EDS2532CABH-75-E | GT 3C 3#0 SKT PLUG |
| EDS2532AABH-75L-E | GT 47C 7#12 40#16 SKT PLUG |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EDS2532CABH-1AL-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM (8M words x 32 bits) |
| EDS2532CABH-75-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM (8M words x 32 bits) |
| EDS2532CABH-75L-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM (8M words x 32 bits) |
| EDS2532CABJ | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM |
| EDS2532CABJ-1A-E | 制造商:ELPIDA 制造商全稱:Elpida Memory 功能描述:256M bits SDRAM |
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