參數(shù)資料
型號(hào): EDS2532CABH-1A-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: GT 25C 25#12 PIN PLUG
中文描述: 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
封裝: LEAD FREE, FBGA-90
文件頁數(shù): 35/48頁
文件大?。?/td> 578K
代理商: EDS2532CABH-1A-E
EDS2532CABH
Data Sheet E0395E40 (Ver. 4.0)
35
Write command to Precharge command interval (same bank)
When the precharge command is executed for the same bank as the write command that preceded it, the minimum
interval between the two commands is 1 clock. However, if the burst write operation is unfinished, the input data
must be masked by means of DQM for assurance of the clock defined by tDPL.
CLK
in A0
in A1
in A2
Command
DQ
WRIT
PRE/PALL
DQM
tDPL
WRITE to PRECHARGE Command Interval (same bank) (BL = 4 (To stop write operation))
CLK
in A0
in A1
in A2
Command
DQ
WRIT
PRE/PALL
in A3
DQM
tDPL
WRITE to PRECHARGE Command Interval (same bank) (BL = 4 (To write all data))
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