參數(shù)資料
型號： EDL1216CASA-10-E
廠商： ELPIDA MEMORY INC
元件分類： DRAM
英文描述： 128M bits Mobile RAM
中文描述： 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
封裝： LEAD FREE, FBGA-54
文件頁數(shù)： 17/59頁
文件大?。?/td> 479K
代理商： EDL1216CASA-10-E
EDL1216AASA
Data Sheet E0196E30 (Ver. 3.0)
17
Current state
/CS /RAS /CAS /WE Address
Command
Action
Notes
Write recovering H
×
×
×
×
×
DESL
Nop
→
Enter row active after tDPL
Nop
→
Enter row active after tDPL
L
H
H
H
NOP
L
H
H
L
×
BST
READ/READA Begin read
WRIT/ WRITA
Nop
→
Enter row active after tDPL
L
H
L
H
BA, CA, A10
6
L
H
L
L
BA, CA, A10
Begin new write
L
L
H
H
BA, RA
ACT
ILLEGAL
2
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
2
L
L
L
H
×
REF
ILLEGAL
Write recovering H
L
L
L
L
OC, BA
MRS/EMRS
ILLEGAL
×
×
×
×
DESL
Nop
→
Enter precharge after tDPL
with auto
L
H
H
H
×
NOP
Nop
→
Enter precharge after tDPL
precharge
L
H
H
L
×
BST
Nop
→
Enter row active after tDPL
L
H
L
H
BA, CA, A10
READ/READA ILLEGAL
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
2, 6
L
L
H
H
BA, RA
ACT
ILLEGAL
2
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
2
L
L
L
H
×
REF
ILLEGAL
Refresh
L
L
L
L
OC, BA
MRS/EMRS
ILLEGAL
H
×
×
×
×
DESL
Nop
→
Enter idle after tRC1
L
H
H
H
×
NOP
Nop
→
Enter idle after tRC1
L
H
H
L
×
BST
Nop
→
Enter idle after tRC1
L
H
L
H
BA, CA, A10
READ/READA ILLEGAL
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
Mode register
L
L
L
L
OC, BA
MRS/EMRS
ILLEGAL
H
×
×
×
×
DESL
Nop
→
Enter idle after tRSC
accessing
L
H
H
H
×
NOP
Nop
→
Enter idle after tRSC
L
H
H
L
×
BST
Nop
→
Enter idle after tRSC
L
H
L
H
BA, CA, A10
READ/READA ILLEGAL
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
L
L
H
L
BA, A10
PRE/PALL
ILLEGAL
L
L
L
H
×
REF
ILLEGAL
L
L
L
L
OC, BA
MRS/EMRS
ILLEGAL
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