參數(shù)資料
型號: EDL1216AASA-75-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: GT 5C 5#16S PIN RECP WALL RM
中文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
封裝: FBGA-54
文件頁數(shù): 21/59頁
文件大?。?/td> 479K
代理商: EDL1216AASA-75-E
EDL1216AASA
Data Sheet E0196E30 (Ver. 3.0)
21
Extended Mode Register
The extended mode register has four fields;
Options
:
A11 through A7
Drive Strength :
A6 through A5
Temperature Compensated Self Refresh
:
A4 through A3
Partial Array Self Refresh
:
A2 through A0
Following extended mode register programming, no command can be issued before at least 2 CLK have elapsed.
Drive Strength
Driving capability of data output drivers.
Temperature Compensated Self Refresh
Programmable refresh rate for self refresh mode to allow the system to control power as a function of temperature.
Partial Array Self Refresh
Memory array size to be refreshed during self refresh operation is programmable in order to reduce power. Data
outside the defined area will not be retained during self refresh.
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參數(shù)描述
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