參數(shù)資料
型號: EDD1216AATA-6B-E
廠商: ELPIDA MEMORY INC
元件分類: DRAM
英文描述: 128M bits DDR SDRAM (8M words x 16 bits)
中文描述: 8M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝: ROHS COMPLIANT, PLASTIC, TSOP2-66
文件頁數(shù): 37/49頁
文件大小: 569K
代理商: EDD1216AATA-6B-E
EDD1216AATA
Data Sheet E0444E40 (Ver. 4.0)
37
A Write command to the consecutive Precharge command interval (same bank)
The minimum interval tWPD is necessary between the write command and the precharge command.
in0
in1
in2
in3
CK
/CK
DQ
DM
DQS
Command
t1
t0
t2
t3
t4
t5
t6
t7
Last data input
tWPD
WRIT
NOP
NOP
tWR
PRE/PALL
WRITE to PRECHARGE Command Interval (same bank) (BL = 4)
Precharge Termination in Write Cycles
During a burst write cycle without auto precharge, the burst write operation is terminated by a precharge command
of the same bank. In order to write the last input data, tWR (min) must be satisfied. When the precharge command
is issued, the invalid data must be masked by DM.
in2
in3
in0
in1
CK
/CK
DQ
DM
DQS
Command
t1
t0
t2
t3
t4
t5
t6
t7
Data masked
WRIT
NOP
NOP
tWR
PRE/PALL
Precharge Termination in Write Cycles (same bank) (BL = 4)
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