參數(shù)資料
型號： DD28F032SA-080
廠商： INTEL CORP
元件分類： DRAM
英文描述： 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY
中文描述： 4M X 8 FLASH 12V PROM, 80 ns, PDSO56
封裝： 14 X 20 MM, 1.20 MM HEIGHT, TSOP-56
文件頁數(shù)： 44/49頁
文件大?。?/td> 1402K
代理商： DD28F032SA-080
DD28F032SA
E
44
6.11 Erase and Word/Byte Write Performance, Cycling Performance
and Suspend Latency
(3)
V
CC
= 3.3V ± 0.3V, V
PP
= 12.0V ± 0.6V, T
A
= 0°C to +70°C
Sym
Parameter
Notes
Min
Typ
(1)
Max
Units
Test Conditions
Page Buffer Byte Write Time
2,4
3.26
Note 6
μs
Page Buffer Word Write Time
2,4
6.53
Note 6
μs
t
WHRH
1
t
WHRH
2
t
WHRH
3
Word/Byte Program Time
2
9
Note 6 μs
Block Program Time
2
0.6
2.1
sec
Byte Program
Block Program Time
2
0.3
1.0
sec
Word Program
Block Erase Time
2
0.8
10
sec
sec
Full Chip Erase Time
Erase Suspend Latency Time
to Read
Auto Erase Suspend Latency
Time to Program
Erase Cycles
2
51.2
7.0
μs
10.0
μs
5
100,000 1,000,000
Cycles
V
CC
= 5.0V ± 0.5V, V
PP
= 12.0V ± 0.6V, T
A
= 0°C to +70°C
Sym
Parameter
Notes
Min
Typ
(1)
Max
Units
Test Conditions
Page Buffer Byte Write Time
2,4
2.76
Note 6
μs
Page Buffer Word Write Time
2,4
5.51
Note 6
μs
t
WHRH
1
t
WHRH
2
t
WHRH
3
Word/Byte Program Time
2
6
Note 6
μs
Block Program Time
2
0.4
2.1
sec
Byte Program
Block Program Time
2
0.2
1.0
sec
Word Program
Block Erase Time
2
0.6
10
sec
sec
Full Chip Erase Time
Erase Suspend Latency Time
to Read
Auto Erase Suspend Latency
Time to Program
Erase Cycles
2
38.4
5.0
μs
8.0
μs
5
100,000 1,000,000
Cycles
NOTES:
1.
+25°C, V
CC
= 3.3V or 5.0V nominal, V
PP
= 12.0V nominal, 10K cycles.
2. Excludes system-level overhead.
3. These performance numbers are valid for all speed versions.
4. This assumes using the full Page Buffer to program to the flash memory (256 bytes or 128words).
5. 1,000,000 cycle performance assumes the application uses block retirement techniques.
6. This information will be available in a technical paper. Please call Intel’s Application hotline or your local Intel sales office for
more information.
相關(guān)PDF資料
PDF描述
DD28F032SA-100 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY
DD28F032SA-150 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY
DD28F032SA100 x8/x16 Flash EEPROM
DD28F032SA70 x8/x16 Flash EEPROM
DD28F032SA 32-Mbit (2 Mbit x 16,4 Mbit x 8) FlashFile Memory(32-M位 (2 M位 x 16,4 M位 x 8) FlashFile存儲器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
DD28F032SA100 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
DD28F032SA-100 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY
DD28F032SA-150 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY
DD28F032SA70 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM
DD28F032SA-70 制造商:Intel 功能描述:4M X 8 FLASH 3V PROM, 70 ns, 56 Pin Plastic SMT
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