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參數(shù)資料
| 型號： | DD28F032SA-080 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| 中文描述： | 4M X 8 FLASH 12V PROM, 80 ns, PDSO56 |
| 封裝： | 14 X 20 MM, 1.20 MM HEIGHT, TSOP-56 |
| 文件頁數(shù)： | 27/49頁 |
| 文件大?。?/td> | 1402K |
| 代理商： | DD28F032SA-080 |
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E
6.5 DC Characteristics
(Continued)
V
= 5.0V ± 0.5V, 5.0V ± 0.25V, T
A
= 0°C to +70°C
3/5# Pin Set Low for 5.0V Operations
DD28F032SA
27
Symbol
Parameter
Notes
Min
Typ
Max
Units
Test Conditions
I
CCE
V
CC
Block Erase
Current
V
CC
Erase Suspend
Current
1,7
18
25
mA
Block Erase in Progress
I
CCES
1,2,6,7
5
10
mA
CE
0
#, CE
X
# = V
IH
Block Erase Suspended
I
PPS
V
PP
Standby/
Read Current
1
± 2
± 20
μA
V
PP
≤
V
CC
I
PPR
130
400
μA
V
PP
> V
CC
I
PPD
V
PP
Deep Power-
Down Current
1
0.4
10
μA
RP# = GND ± 0.2V
I
PPW
V
PP
Prog. Current
for Word or Byte
1
7
12
mA
V
PP
= V
PPH
Program in Progress
I
PPE
V
PP
Block Erase
Current
V
PP
Erase
Suspend Current
1
5
10
mA
V
PP
= V
PPH
Block Erase in Progress
V
PP
= V
PPH
Block Erase Suspended
I
PPES
1
130
400
μA
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
+ 0.5
V
V
OL
Output Low Voltage
0.45
V
V
CC
= V
CC
Min, I
OL
= 5.8 mA
V
OH
1
Output High
Voltage
0.85
V
CC
V
CC
– 0.4
V
V
CC
= V
CC
Min, I
OH
= –2.5 mA
V
OH
2
V
CC
= V
CC
Min, I
OH
= –100 μA
V
PPL
V
PP
during Normal
Operations
V
PP
during Prog.
Erase Operations
V
CC
Program/Erase
Lock Voltage
3
0.0
6.5
V
V
PPH
11.4
12.0
12.6
V
V
LKO
2.0
V
NOTES:
1.
All currents are in RMS unless otherwise noted. Typical values at V
CC
= 5.0V, V
PP
= 12.0V, T = +25°C. These currents are
valid for all product versions (package and speeds).
I
is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum
of I
CCES
and I
CCR.
Block erases, word/byte programs and lock block operations are inhibited when V
PP
= V
PPL
and not guaranteed in the
range between V
PPH
and V
PPL
.
Automatic Power Saving (APS) reduces I
CCR
to <2 mA in static operation.
CMOS Inputs are either V
CC
± 0.2V or GND ± 0.2V. TTL Inputs are either V
IL
or V
IH
.
CE
X
#= CE
1
# or CE
2
#.
If operating with TTL levels, add 4 mA of V
CC
standby current. to max I
CCR
1, I
CCR
2, I
CCW
, I
CCE
and I
CCES
.
Standby current levels are not reached when putting the chip in standby mode immediately after reading the page buffer.
Default the device into read array or read Status Register mode before entering standby to ensure standby current levels.
2.
3.
4.
5.
6.
7.
8.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| DD28F032SA-100 | 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY |
| DD28F032SA-150 | 32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| DD28F032SA100 | x8/x16 Flash EEPROM |
| DD28F032SA70 | x8/x16 Flash EEPROM |
| DD28F032SA | 32-Mbit (2 Mbit x 16,4 Mbit x 8) FlashFile Memory(32-M位 (2 M位 x 16,4 M位 x 8) FlashFile存儲器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DD28F032SA100 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| DD28F032SA-100 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| DD28F032SA-150 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile⑩ MEMORY |
| DD28F032SA70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8/x16 Flash EEPROM |
| DD28F032SA-70 | 制造商:Intel 功能描述:4M X 8 FLASH 3V PROM, 70 ns, 56 Pin Plastic SMT |
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