型號 廠商 描述
ixfn36n100
2 3 4		 IXYS CORP HiPerFET Power MOSFETs Single Die MOSFET
ixfn36n60
2 3 4		 IXYS CORP HiPerFET Power MOSFET
ixfn38n100q2
2 3 4		 IXYS CORP N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
ixfn39n90
2 3 4		 IXYS CORP 30V N-Channel PowerTrench MOSFET
ixfn40n60
2		 IXYS CORP HiPerFET Power MOSFET
ixfk40n60
2		 IXYS CORP HiPerFET Power MOSFET
ixfk43n60
2		 IXYS CORP HiPerFET Power MOSFET
ixfn43n60
2		 IXYS CORP HiPerFET Power MOSFET
ixfn44n50q
2		 IXYS CORP HiPerFET Power MOSFETs Q-Class
ixfn48n50q
2		 IXYS CORP HiPerFET Power MOSFETs Q-Class
ixfn44n50u2
2 3 4 5		 IXYS CORP HiPerFET Power MOSFETs
ixfn44n50u3
2 3 4 5		 IXYS CORP HiPerFET Power MOSFETs
ixfn48n50u2
2 3 4 5		 IXYS CORP HiPerFET Power MOSFET （Buck & Boost Configurations for PFC & Motor Control Circuits）(最大漏源擊穿電壓800V,導(dǎo)通電阻0.10Ω的N溝道增強型HiPerFET功率MOSFET（步升&步降配置，用于PFC和電機控制電路）)
ixfn48n50u3
2 3 4 5		 IXYS CORP HiPerFET Power MOSFETs
ixfn44n60
2 3 4		 IXYS CORP HiPerFET Power MOSFETs Single Die MOSFET
ixfn44n50
2 3 4		 IXYS CORP HiPerFET Power MOSFETs
ixfn44n80p
2 3 4		 IXYS CORP PolarHV HiPerFET Power MOSFET
ixfn48n55
2		 IXYS CORP N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓550V,導(dǎo)通電阻110mΩ的N溝道增強型HiPerFET功率MOSFET)
ixfn58n50
2		 IXYS CORP High Current Power MOSFET
ixfn60n60
2		 IXYS CORP N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓600V,導(dǎo)通電阻75mΩ的N溝道增強型HiPerFET功率MOSFET)
ixfn72n55q2
2 3 4		 IXYS CORP HiPerFET Power MOSFET
ixfn73n30q
2		 IXYS CORP HiPerFET Power MOSFETs Q-Class
ixfn75n50
2 3 4		 IXYS CORP HiPerFET Power MOSFETs Single Die MOSFET
ixfn80n50
2 3 4		 IXYS CORP HiPerFET Power MOSFETs Single Die MOSFET
ixfn80n48
2		 IXYS CORP N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓480V,導(dǎo)通電阻45mΩ的N溝道增強型HiPerFET功率MOSFET)
ixfn90n30
2		 IXYS CORP N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓300V,導(dǎo)通電阻33mΩ的N溝道增強型HiPerFET功率MOSFET)
ixfp3n80
2		 IXYS CORP HiPerFET Power MOSFETs
ixfp4n100q
2 3 4		 IXYS CORP HiPerFET Power MOSFETs Q-Class
ixfq26n60p
2 3 4 5		 IXYS CORP N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
ixft26n60p
2 3 4 5		 IXYS CORP N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
ixfv26n60p
2 3 4 5		 IXYS CORP N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
ixfv26n60ps
2 3 4 5		 IXYS CORP N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
ixfr100n25
2		 IXYS CORP N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓250V,導(dǎo)通電阻27mΩ的N溝道增強型HiPerFET功率MOSFET)
ixfr10n100q
2		 IXYS CORP N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
ixfr12n100q
2		 IXYS CORP N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
ixfr120n20
2		 IXYS CORP HiPerFETTM Power MOSFETs ISOPLUS247
ixfr150n15
2		 IXYS CORP N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓150V,導(dǎo)通電阻12.5mΩ的N溝道增強型HiPerFET功率MOSFET)
ixfr15n80q
2		 IXYS CORP N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導(dǎo)通電阻0.60Ω的N溝道增強型HiPerFET功率MOSFET)
ixfr180n07
2		 IXYS CORP N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓70V,導(dǎo)通電阻6mΩ的N溝道增強型HiPerFET功率MOSFET)
ixfr180n085
2		 IXYS CORP N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓85V,導(dǎo)通電阻7mΩ的N溝道增強型HiPerFET功率MOSFET)
ixfr180n10
2		 IXYS CORP HiPerFET Power MOSFETs ISOPLUS247
ixfr180n06
2		 IXYS CORP HiPerFETTM Power MOSFETs
ixfr200n10p
2 3 4 5		 IXYS CORP PolarTM HiPerFET Power MOSFET
ixfr24n100
2		 IXYS CORP N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻0.39Ω的N溝道增強型HiPerFET功率MOSFET)
ixfr26n50q
2		 IXYS CORP N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓500V,導(dǎo)通電阻0.20Ω的N溝道增強型HiPerFET功率MOSFET)
ixfr26n60q
2		 IXYS CORP N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓600V,導(dǎo)通電阻250mΩ的N溝道增強型HiPerFET功率MOSFET)
ixfr30n50
2 3 4		 IXYS CORP HiPerFET Power MOSFETs ISOPLUS247
ixfr30n50q
2 3 4		 IXYS CORP HiPerFET Power MOSFETs ISOPLUS247
ixfr32n50q
2 3 4		 IXYS CORP HiPerFET Power MOSFETs ISOPLUS247
ixfr38n80q2
2 3 4 5		 IXYS CORP Electrically Isolated Back Surface