參數(shù)資料
型號： IXFN44N80P
廠商： IXYS CORP
元件分類： JFETs
英文描述： PolarHV HiPerFET Power MOSFET
中文描述： 39 A, 800 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, MINIBLOC-4
文件頁數(shù)： 1/4頁
文件大小： 92K
代理商： IXFN44N80P
2006 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Ω
800
800
V
V
V
GS
V
GSM
Continuous
Transient
±
30
±
40
V
V
I
D25
I
DM
I
AR
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
39
A
A
100
22
80
3.4
A
mJ
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 10
Ω
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
10
V/ns
P
D
T
J
T
JM
T
stg
694
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
V
ISOL
50/60 Hz, RMS, 1 minute
I
ISOL
< 1 mA, 10 seconds
2500
3000
V~
V~
M
d
Mounting torque
Terminal torque
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
Weight
30
g
Symbol
(T
J
= 25
°
C unless otherwise specified)
V
GS
= 0 V, I
D
= 800
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
BV
DSS
800
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8 mA
3.0
5.0
V
I
GSS
V
GS
=
±
30 V, V
DS
= 0 V
±
200
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
50
1.5
μ
A
mA
T
J
= 125
°
C
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
TD25
, Note 1
190
m
Ω
PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN 44N80P
V
DSS
I
D25
R
DS(on)
≤
190 m
Ω
t
rr
= 800
=
V
A
39
≤
250
ns
DS99503E(06/06)
G
D
S
S
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate
S = Source
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
International standard package
Encapsulating
epoxy
meets
UL
94
V-0, flammability classification
miniBLOC
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
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相關代理商/技術參數(shù)
參數(shù)描述
IXFN44N80Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 800V/37A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN48N50 功能描述:MOSFET 500V 48A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN48N50 制造商:IXYS Corporation 功能描述:MOSFET N SOT-227B
IXFN48N50Q 功能描述:MOSFET 48 Amps 500V 0.1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN48N50U2 功能描述:MOSFET 48 Amps 500V 0.1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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