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參數資料
| 型號： | IXFN48N50U3 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFET Power MOSFETs |
| 中文描述： | 48 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIBLOC-4 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 151K |
| 代理商： | IXFN48N50U3 |
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2000 IXYS All rights reserved
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C
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IXYS reserves the right to change limits, test conditions, and dimensions.
96535B (7/00)
Buck & Boost Configurations for
PFC & Motor Control Circuits
V
DSS
500 V
500 V
I
D (cont)
44 A
48 A
R
DS(on)
0.12
0.10
t
rr
35 ns
35 ns
IXFN44N50U2 IXFN44N50U3
IXFN48N50U2 IXFN48N50U3
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
500
V
500
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
T
C
= 25 C
44N50
48N50
44
48
A
A
I
DM
T
= 25 C,
pulse width limited by max. T
JM
T
C
= 25 C
44N50
48N50
176
192
A
A
I
AR
24
A
E
AR
Repetitive
30
mJ
dv/dt
I
S
I
, -di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
5
V/ns
P
D
T
C
= 25 C
520
W
V
RRM
600
V
I
FAVM
T
C
= 70 C; rectangular, d = 0.5
60
A
I
FRM
tp <10 s; pulse width limited by T
J
800
A
P
D
T
C
= 25 C
180
W
T
J
T
JM
T
stg
-40 ... +150
C
C
C
150
-40 ... +150
V
ISOL
50/60 Hz, RMS
I
ISOL
1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
Mounting torque
Terminal connection torque (M4)
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
miniBLOC, SOT-227 B
2
1
4
3
Features
Popular Buck & Boost circuit
topologies
International standard package
miniBLOC SOT-227B
Aluminium nitride isolation
- high power dissipation
Isolation voltage 3000 V~
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low drain-to-case capacitance
(<60 pF)
- reduced RFI
Ultra-fast FRED diode with soft
reverse recovery
Applications
Power factor controls and buck
regulators
DC servo and robotic drives
DC choppers
Switch reluctance motor controls
Advantages
Easy to mount with 2 screws
Space savings
Tightly coupled FRED
HiPerFET
TM
Power MOSFETs
Preliminary data
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PDF描述 |
|---|---|
| IXFN44N60 | HiPerFET Power MOSFETs Single Die MOSFET |
| IXFN44N50 | HiPerFET Power MOSFETs |
| IXFN44N80P | PolarHV HiPerFET Power MOSFET |
| IXFN48N55 | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓550V,導通電阻110mΩ的N溝道增強型HiPerFET功率MOSFET) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IXFN48N55 | 功能描述:MOSFET N-CH 550V 48A SOT-227B RoHS:是 類別:半導體模塊 >> FET 系列:HiPerFET™ 標準包裝:10 系列:* |
| IXFN48N60P | 功能描述:MOSFET 600V 48A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN50N25 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs |
| IXFN50N50 | 功能描述:MOSFET 50 Amps 500V 0.1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFN50N80Q2 | 功能描述:MOSFET 50 Amps 800V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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