| 型號(hào) | 廠商 | 描述 |
| ixsn35n120au1 2 3 4 |
IXYS CORP | High Voltage IGBT with Diode |
| ixsn50n60bd2 2 3 4 5 |
IXYS CORP | High Speed IGBT with HiPerFRED(VCES為600V，VCE(sat)為2.5V的高速絕緣柵雙極晶體管(帶Hiper快速恢復(fù)外延型二極管)) |
| ixsn52n60au1 2 3 4 5 |
IXYS CORP | IGBT with Diode(VCES為600V，VCE(sat)為3V的絕緣柵雙極晶體管(帶二極管）) |
| ixsn55n120au1 2 |
IXYS CORP | High Voltage IGBT with Diode(高電壓帶二極管的絕緣柵雙極晶體管) |
| ixsn55n120 2 |
IXYS Corporation | High Voltage IGBT |
| ixsn55n120a 2 |
IXYS CORP | High Voltage IGBT |
| ixsn62n60u1 2 |
IXYS CORP | IGBT with Diode - Short Circuit SOA Capability |
| ixsn80n60au1 2 3 4 |
IXYS CORP | IGBT with Diode(VCES為600V，VCE(sat)為3V的絕緣柵雙極晶體管（帶二極管）) |
| ixsn80n60a 2 |
IXYS CORP | High Current IGBT(VCES為600V，VCE(sat)為3V的大電流絕緣柵雙極晶體管) |
| ixsn80n60bd1 2 |
IXYS CORP | IGBT with Diode Short Circuit SOA Capability |
| ixsp16n60 2 |
IXYS CORP | Low V CE(sat) IGBT - Short Circuit SOA Capability |
| ixsa16n60 2 |
IXYS CORP | Low VCE(sat) IGBT(VCE(sat)典型值為1.8V的絕緣柵雙極晶體管) |
| ixsr35n120bd1 2 |
IXYS CORP | IGBT with Diode(VCES為1200V，VCE(sat)為3.6V的絕緣柵雙極晶體管（帶二極管）) |
| ixsr40n60cd1 2 |
IXYS CORP | IGBT with Diode(VCES為600V，VCE(sat)為2.5V的絕緣柵雙極晶體管(帶二極管)) |
| ixsx35n120au1 2 3 4 5 |
IXYS CORP | High Voltage IGBT with Diode(VCES為1200V，VCE(sat)為4V的高電壓絕緣柵雙極晶體管(帶二極管）) |
| ixsx50n60au1 2 3 4 5 |
IXYS CORP | IGBT with Diode Combi Pack - Short Circuit SOA Capability |
| ixsx50n60au1s 2 3 4 5 |
IXYS CORP | IGBT with Diode Combi Pack - Short Circuit SOA Capability |
| ixta05n100 2 |
IXYS CORP | N-Channel Enhancement Mode High Voltage MOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻15Ω的N溝道增強(qiáng)型高電壓MOSFET) |
| ixta110n055p 2 3 4 5 |
IXYS CORP | PolarHT Power MOSFET |
| ixtp110n055p 2 3 4 5 |
IXYS CORP | PolarHT Power MOSFET |
| ixtq110n055p 2 3 4 5 |
IXYS CORP | PolarHT Power MOSFET |
| ixta180n055t 2 3 4 5 |
IXYS CORP | Trench Gate Power MOSFET |
| ixtp180n055t 2 3 4 5 |
IXYS CORP | Trench Gate Power MOSFET |
| ixtq180n055t 2 3 4 5 |
IXYS CORP | Trench Gate Power MOSFET |
| ixta1n100 2 |
IXYS CORP | High Voltage MOSFET |
| ixta1n80 2 |
IXYS CORP | High Voltage MOSFET |
| ixtp1n80 2 |
IXYS CORP | High Voltage MOSFET |
| ixty1n80 2 |
IXYS CORP | High Voltage MOSFET |
| ixta3n120 2 3 4 |
IXYS CORP | High Voltage Power MOSFETs |
| ixta3n110 2 3 4 |
IXYS CORP | High Voltage Power MOSFETs |
| ixta3n50p 2 3 4 5 |
IXYS CORP | PolarHV Power MOSFET |
| ixtp3n50p 2 3 4 5 |
IXYS CORP | PolarHV Power MOSFET |
| ixty3n50p 2 3 4 5 |
IXYS CORP | PolarHV Power MOSFET |
| ixta3n60p 2 3 4 |
IXYS CORP | R8C; R8C/2x Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 96K; RAM: 5K; ROM Type: Flash memory; CPU: R8C core; Minimum Instruction Execution Time (ns): 50 (@20MHz); Operating Frequency / Supply Voltage: 20MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -40 to 85; Package Code: PLQP0048KB-A (48P6Q-A) |
| ixta50n20p 2 3 4 5 |
IXYS CORP | PolarHT Power MOSFET N-Channel Enhancement Mode |
| ixtp50n20p 2 3 4 5 |
IXYS CORP | PolarHT Power MOSFET N-Channel Enhancement Mode |
| ixtq50n20p 2 3 4 5 |
IXYS CORP | PolarHT Power MOSFET N-Channel Enhancement Mode |
| ixta62n15p 2 3 4 5 |
IXYS CORP | PolarHT Power MOSFET |
| ixtp62n15p 2 3 4 5 |
IXYS CORP | PolarHT Power MOSFET |
| ixtq62n15p 2 3 4 5 |
IXYS CORP | PolarHT Power MOSFET |
| ixta75n10p 2 3 4 5 |
IXYS CORP | N-Channel Enhancement Mode |
| ixtp75n10p 2 3 4 5 |
IXYS CORP | N-Channel Enhancement Mode |
| ixtq75n10p 2 3 4 5 |
IXYS CORP | N-Channel Enhancement Mode |
| ixta8n50p 2 3 4 5 |
IXYS CORP | PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated |
| ixtp8n50p 2 3 4 5 |
IXYS CORP | PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated |
| ixtb30n100l 2 3 4 5 |
IXYS CORP | Power MOSFETs with Extended FBSOA |
| ixtn30n100l 2 3 4 5 |
IXYS CORP | Power MOSFETs with Extended FBSOA |
| ixtc13n50 2 |
IXYS CORP | Power MOSFET ISOPLUS220 |
| ixtc26n50p 2 3 4 5 |
IXYS CORP | PolarHV Power MOSFET |
| ixth10n100 2 3 4 |
IXYS CORP | N-Channel Enhancement Mode MegaMOSFET(最大漏源擊穿電壓1000V,導(dǎo)通電阻1.20Ω的N溝道增強(qiáng)型MegaMOSFET) |