
CYNSE70032
Document #: 38-02042 Rev. *E
Page 100 of 126
15.4
The following explains the SRAM Read operation completed through a table of up to eight devices using the following parameter:
TLSZ = 01. 
Figure 15-2
 diagrams a block of eight devices. The following assumes that SRAM access is successfully achieved
through CYNSE70032 device number 0. 
Figure 15-3
 and 
Figure 15-4
 show timing diagrams for device number 0 and device
number 7, respectively. 
 Cycle 1A
: The host ASIC applies the Read instruction on CMD[1:0] using CMDV = 1. The DQ bus supplies the address, with 
DQ[20:19] set to 10, to select the SRAM address. The host ASIC selects the device for which ID[4:0] matches the DQ[25:21] 
lines. During this cycle the host ASIC also supplies SADR[21:19] on CMD[8:6].
 Cycle 1B
: The host ASIC continues to apply the Read instruction on CMD[1:0] using CMDV = 1. The DQ bus supplies the 
address, with DQ[20:19] set to 10 to select the SRAM address. 
 Cycle 2
: The host ASIC floats DQ[67:0] to a three-state condition. 
 Cycle 3
: The host ASIC keeps DQ[67:0] in a three-state condition.
 Cycle 4
: The selected device starts to drive DQ[67:0].
 Cycle 5
: The selected device continues to drive DQ[67:0] and drives ACK from high-Z to low.
 Cycle 6
: The selected device drives the Read address on SADR[21:0]. It also drives ACK high, CE_L low, WE_L high, and 
ALE_L low.
 Cycle 7
: The selected device drives CE_L, ALE_L, WE_L, and DQ bus in a three-state condition. It continues to drive ACK low.
At the end of cycle 7, the selected device floats ACK in a three-state condition, and a new command can begin.
SRAM Read with a Table of up to Eight Devices
 cycle
1
CLK2X
DQ
Read
Address
ACK
OE_L
WE_L
ALE_L
SADR
Address
 cycle
2
 cycle
3
 cycle
4
 cycle
5
 cycle
6
TLSZ = 00, HLAT = 000, LRAM = 1, LDEV = 1.
Figure 15-1. SRAM Read ACCESS (TLSZ = 00, HLAT = 000, LRAM = 1, LDEV = 1)
PHS_L
CMD[8:2]
A
B
z
z
0
1
0
z
z
0
0
1
z
1
z
1
SSV
0
0
SSF
CE_L
1
0
1
DQ driven by CYNSE70032.
CMDV
CMD[1:0]