參數(shù)資料
型號: CXK79M72C165GB
英文描述: MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
中文描述: 內(nèi)存SigmaRAM 16Meg 1x1z的LVCMOS的I / O(256 × 72)(27頁364K牧師7/6/01)
文件頁數(shù): 27/30頁
文件大?。?/td> 554K
代理商: CXK79M72C165GB
SONY
Σ
RAM CXK79M72C160GB / CXK79M36C160GB / CXK79M18C160GB
Preliminary
18Mb 1x1Lp, HSTL, rev 1.0
27 / 30
July 19, 2002
Ordering Information
Part Number
V
DD
I/O Type
Configuration
Speed
(Cycle Time / Data Access Time)
CXK79M72C160GB-33
1.8V
HSTL
256Kb x 72
3.3ns / 1.8ns
CXK79M72C160GB-4
1.8V
HSTL
256Kb x 72
4.0ns / 2.1ns
CXK79M72C160GB-5
1.8V
HSTL
256Kb x 72
5.0ns / 2.3ns
CXK79M36C160GB-33
1.8V
HSTL
512Kb x 36
3.3ns / 1.8ns
CXK79M36C160GB-4
1.8V
HSTL
512Kb x 36
4.0ns / 2.1ns
CXK79M36C160GB-5
1.8V
HSTL
512Kb x 36
5.0ns / 2.3ns
CXK79M18C160GB-33
1.8V
HSTL
1Mb x 18
3.3ns / 1.8ns
CXK79M18C160GB-4
1.8V
HSTL
1Mb x 18
4.0ns / 2.1ns
CXK79M18C160GB-5
1.8V
HSTL
1Mb x 18
5.0ns / 2.3ns
Sony reserves theright tochange products andspecifications without priornotice.This information does not conveyany license
by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illus-
trating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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