參數(shù)資料
型號(hào)： CXK79M72C165GB
英文描述： MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
中文描述： 內(nèi)存SigmaRAM 16Meg 1x1z的LVCMOS的I / O（256 × 72）（27頁364K牧師7/6/01）
文件頁數(shù)： 10/30頁
文件大?。?/td> 554K
代理商： CXK79M72C165GB
SONY
Σ
RAM CXK79M72C160GB / CXK79M36C160GB / CXK79M18C160GB
Preliminary
18Mb 1x1Lp, HSTL, rev 1.0
10 / 30
July 19, 2002
Absolute Maximum Ratings
Note
: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other conditions other than those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
BGA Package Thermal Characteristics
I/O Capacitance
(T
A
= 25
o
C, f = 1 MHz)
Note
: These parameters are sampled and are not 100% tested.
Parameter
Symbol
Rating
Units
Supply Voltage
V
DD
-0.5 to +2.5
V
Output Supply Voltage
V
DDQ
-0.5 to +2.3
V
Input Voltage (Address, Control, Data, Clock)
V
IN
-0.5 to V
DDQ
+0.5 (2.3V max)
V
Input Voltage (EP2, EP3, MCL, MCH)
V
MIN
-0.5 to V
DD
+0.5 (2.5V max)
V
Input Voltage (TCK, TMS, TDI)
V
TIN
-0.5 to V
DD
+0.5 (2.5V max)
V
Operating Temperature
T
A
0 to 85
°
C
Junction Temperature
T
J
0 to 110
°
C
Storage Temperature
T
STG
-55 to 150
°
C
Parameter
Symbol
Rating
Units
Junction to Case Temperature
Θ
JC
3.6
°
C/W
Parameter
Symbol
Test conditions
Min
Max
Units
Input Capacitance
Address
C
IN
V
IN
= 0V
---
3.5
pF
Control
C
IN
V
IN
= 0V
---
3.5
pF
CK Clock
C
KIN
V
KIN
= 0V
---
4.0
pF
Output Capacitance
Data
C
OUT
V
OUT
= 0V
---
4.5
pF
CQ Clock
C
OUT
V
OUT
= 0V
---
4.5
pF
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