參數(shù)資料
型號(hào): CXK79M72C165GB
英文描述: MEMORY-SigmaRAM 16Meg 1x1z LVCMOS I/O (256K x 72) (27 pages 364K Rev. 7/6/01)
中文描述: 內(nèi)存SigmaRAM 16Meg 1x1z的LVCMOS的I / O(256 × 72)(27頁364K牧師7/6/01)
文件頁數(shù): 14/30頁
文件大?。?/td> 554K
代理商: CXK79M72C165GB
SONY
Σ
RAM CXK79M72C160GB / CXK79M36C160GB / CXK79M18C160GB
Preliminary
18Mb 1x1Lp, HSTL, rev 1.0
14 / 30
July 19, 2002
AC Electrical Characteristics (Note)
The two AC timing parameters listed below are tested according to specific combinations of Output Clocks (CQs) and Out-
put Data (DQs):
1. t
CHQV
-
Output Clock High to Output Data Valid (max)
2. t
CHQX
-
Output Clock High to Output Data Hold (min)
The specific CQ / DQ combinations are defined as follows:
256Kb x 72
512Kb x 36
1Mb x 18
CQs
DQs
CQs
DQs
CQs
DQs
1K, 2K
1A, 2A, 1B, 2B, 1C, 2C,
1D, 2D, 1E, 2E, 1F, 2F,
1G, 2G, 1H, 2H, 1J, 2J, 1L,
2L, 1M, 2M, 1N, 2N, 1P,
2P, 2R, 1R, 1T, 2T,
1U, 2U, 1V, 2V, 1W, 2W
1K, 2K
2E, 1F, 2F, 1G, 2G, 1H,
2H, 1J, 2J, 1R, 1T, 2T,
1U, 2U, 1V, 2V, 1W, 2W
1K, 2K
2E, 1F, 2F, 1G, 2G, 1H,
2H, 1J, 2J
10K, 11K
10A, 11A, 10B, 11B,
10C, 11C, 10D, 11D, 11E,
10E, 10F, 11F, 10G, 11G,
10H, 11H, 10J, 11J,
10L, 11L, 10M, 11M,
10N, 11N, 10P, 11P, 10R,
11R, 10T, 11T, 10U, 11U,
10V, 11V, 10W, 11W
10K, 11K
10A, 11A, 10B, 11B,
10C, 11C, 10D, 11D, 11E,
10L, 11L, 10M, 11M,
10N, 11N, 10P, 11P, 10R
10K, 11K
10L, 11L, 10M, 11M,
10N, 11N, 10P, 11P, 10R
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