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| 型號(hào)： | COP8SBR9KMT8 |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 微控制器/微處理器 |
| 英文描述： | 8-Bit CMOS Flash Based Microcontroller with 32k Memory, Virtual EEPROM and Brownout |
| 中文描述： | 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PDSO56 |
| 封裝： | TSSOP-56 |
| 文件頁(yè)數(shù)： | 13/80頁(yè) |
| 文件大小： | 972K |
| 代理商： | COP8SBR9KMT8 |
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8.0 Electrical Characteristics
DC Electrical Characteristics (40C
≤
T
A
≤
+85C)
(Continued)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
(Continued)
Parameter
Conditions
Min
Typ
Max
Units
Output Current Levels
D Outputs
Source
V
CC
= 4.5V, V
OH
= 3.8V
V
CC
= 2.7V, V
OH
= 1.8V
V
CC
= 4.5V, V
OL
= 1.0V
V
CC
= 2.7V, V
OL
= 0.4V
7
4
10
3.5
mA
mA
mA
mA
Sink (Note 7)
All Others
Source (Weak Pull-Up Mode)
V
CC
= 4.5V, V
OH
= 3.8V
V
CC
= 2.7V, V
OH
= 1.8V
V
CC
= 4.5V, V
OH
= 3.8V
V
CC
= 2.7V, V
OH
= 1.8V
V
CC
= 4.5V, V
OL
= 1.0V
V
CC
= 2.7V, V
OL
= 0.4V
V
CC
= 5.5V
10
5
7
4
10
3.5
0.5
μA
μA
mA
mA
mA
mA
μA
mA
Source (Push-Pull Mode)
Sink (Push-Pull Mode) (Note 7)
TRI-STATE Leakage
Allowable Sink Current per Pin
Maximum Input Current without Latchup (Note
5)
RAM Retention Voltage, V
R
(in HALT Mode)
Input Capacitance
Load Capacitance on D2
Voltage on G6 to Force Execution from Boot
ROM (Note 8)
G6 Rise Time to Force Execution from Boot
ROM
Input Current on G6 when Input
>
V
CC
Flash Memory Data Retention
Flash Memory Number of Erase/Write Cycles
+0.5
15
±
200
mA
2.0
V
pF
pF
7
1000
G6 rise time must be slower
than 100 nS
2 x V
CC
V
CC
+ 7
V
100
nS
V
IN
= 11V, V
CC
= 5.5V
25C
See
Table 13
,
Typical Flash
Memory Endurance
500
100
μA
yrs
10
5
cycles
AC Electrical Characteristics (40C
≤
T
A
≤
+85C)
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Units
Instruction Cycle Time (t
C
)
Crystal/Resonator
4.5V
≤
V
CC
≤
5.5V
2.7V
≤
V
CC
<
4.5V
See
Table 13
,
Typical
Flash Memory
Endurance
0.5
1.5
DC
DC
μs
μs
Flash Memory Page Erase Time
1
ms
Flash Memory Mass Erase Time
Frequency of MICROWIRE/PLUS in
Slave Mode
MICROWIRE/PLUS Setup Time (t
UWS
)
MICROWIRE/PLUS Hold Time (t
UWH
)
MICROWIRE/PLUS Output Propagation
Delay (t
UPD
)
Input Pulse Width
Interrupt Input High Time
Interrupt Input Low Time
8
ms
2
MHz
20
20
ns
ns
150
ns
1
1
t
C
t
C
C
www.national.com
13
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| COP8SBR9LVA8 | 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線(xiàn)寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| COP8SBR9LVA8/NOPB | 功能描述:8位微控制器 -MCU RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線(xiàn)寬度:8 bit 最大時(shí)鐘頻率:50 MHz 程序存儲(chǔ)器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| COP8SBR9LVA8NOPB | 制造商:National Semiconductor 功能描述:MCU 8-bit COP8 CISC 32KB Flash 3.3V/5V 68-Pin PLCC Rail |
| COP8SCE9 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述: |
| COP8SCE9HLQ7 | 制造商:NSC 制造商全稱(chēng):National Semiconductor 功能描述:8-Bit CMOS Flash Microcontroller with 8k Memory, Virtual EEPROM and Brownout Reset |
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