參數(shù)資料
型號: BUW12F
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 8 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 9/12頁
文件大?。?/td> 81K
代理商: BUW12F
1997 Aug 14
9
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW12F; BUW12AF
Fig.12 Test circuit resistive load.
V
CC
= 250 V; t
p
= 20
μ
s; V
IM
=
6 to +8 V; t
p
/T = 0.01.
The values of R
B
and R
L
are selected in accordance with I
Con
and
I
Bon
requirements.
handbook, halfpage
MGE244
VCC
D.U.T.
RL
RB
VIM
tp
T
0
Fig.13 Switching time waveforms with
resistive load.
t
r
20 ns.
handbook, halfpage
MBB731
t
90%
10%
90%
10%
IC
IB
IB on
IB off
IC on
tr
30 ns
ts
tf
ton
t
Fig.14 Test circuit inductive load and reverse
bias SOAR.
V
CL
= up to 1000 V; V
CC
= 30 V; V
BE
=
1 V to
5 V; L
B
= 1
μ
H;
L
C
= 200
μ
H.
handbook, halfpage
MGE246
+
IB
VBE
LB
LC
VCC
D.U.T.
VCL
Fig.15 Switching time waveforms with
inductive load.
handbook, halfpage
MGE238
tr
90%
10%
IB
IB on
IB off
IC on
90%
10%
IC
t
t
ts
toff
tf
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