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參數(shù)資料
| 型號(hào)： | BUW12F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 81K |
| 代理商： | BUW12F |
1997 Aug 14
8
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW12F; BUW12AF
Fig.8
Test circuit for collector-emitter
sustaining voltage.
handbook, halfpage
MGE252
+
50 V
100 to 200
30 to 60 Hz
L
6 V
oscilloscope
vertical
horizontal
1
300
Fig.9
Oscilloscope display for collector-emitter
sustaining voltage.
handbook, halfpage
(mA)
MGE239
250
200
100
0
min
VCEOsust
VCE (V)
Fig.10 Collector-emitter saturation voltage as a
function of base current.
T
j
= 25
°
C.
(1) I
C
= 3 A.
(2) I
C
= 6 A.
(3) I
C
= 8 A.
handbook, halfpage
10
2
10
1
10
1
1
1
VCEsat
(V)
IB (A)
10
MGB872
(1)
(2)
(3)
Fig.11 DC current gain; typical values.
T
j
= 125
°
C.
handbook, halfpage
MBC096
2
10
2
10
1
1
10
10
2
10
1
IC (A)
hFE
VCE = 5 V
1V
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