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參數(shù)資料
| 型號： | BUW12F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大小： | 81K |
| 代理商： | BUW12F |
1997 Aug 14
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW12F; BUW12AF
handbook, full pagewidth
VBEsat
VCEsat
(V)
0
10
1
MGB914
10
2
1
IC (A)
10
0.5
1.5
1.0
(1)
(2)
(4)
(3)
Fig.6 Base-emitter and collector-emitter saturation voltages as functions of collector current; typical values.
I
C
/I
B
= 5.
(1) V
BE
; T
j
= 25
°
C.
(2) V
BE
; T
j
= 100
°
C.
(3) V
CE
; T
j
= 100
°
C.
(4) V
CE
; T
j
= 25
°
C.
Fig.7 Base-emitter voltage as a function of base current; typical values.
handbook, full pagewidth
3
IB (A)
1.4
0.8
0
0.5
VBE
(V)
MGB911
1.2
1.0
2
2.5
1
1.5
(1)
(2)
(3)
T
j
= 25
°
C.
(1) I
C
= 8 A.
(2) I
C
= 6 A.
(3) I
C
= 3 A.
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