參數(shù)資料
型號(hào): BUW12F
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 8 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 3/12頁
文件大?。?/td> 81K
代理商: BUW12F
1997 Aug 14
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW12F; BUW12AF
THERMAL CHARACTERISTICS
Notes
1.
2.
Mounted
without
heatsink compound and 30
±
5 N force on centre of package.
Mounted
with
heatsink compound and 30
±
5 N force on centre of package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1.
2.
Mounted
without
heatsink compound and 30
±
5 N force on centre of package.
Mounted
with
heatsink compound and 30
±
5 N force on centre of package.
ISOLATION CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to external heatsink note 1
3.7
2.8
35
K/W
K/W
K/W
note 2
R
th j-a
thermal resistance from junction to ambient
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
collector-emitter peak voltage
BUW12F
BUW12AF
collector-emitter voltage
BUW12F
BUW12AF
collector saturation current
BUW12F
BUW12AF
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
V
BE
= 0
850
1000
V
V
V
CEO
open base
400
450
V
V
I
Csat
V
CE
= 1.5 V
65
6
5
8
20
4
6
34
45
+150
150
A
A
A
A
A
A
W
W
°
C
°
C
I
C
I
CM
I
B
I
BM
P
tot
see Figs 2 and 5
see Fig 2
T
h
25
°
C; see Fig.4; note 1
T
h
25
°
C; see Fig.4; note 2
T
stg
T
j
storage temperature
junction temperature
SYMBOL
PARAMETER
MAX.
UNIT
V
isolM
C
isol
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
1500
21
V
pF
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