參數(shù)資料
型號: BUW12F
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 8 A, 400 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 5/12頁
文件大?。?/td> 81K
代理商: BUW12F
1997 Aug 14
5
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW12F; BUW12AF
Fig.2 Forward bias SOAR.
Mounted
without
heatsink compound and 30
±
5 N force on centre of package.
T
mb
< 25
°
C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
handbook, full pagewidth
MGB916
1
10
1
10
2
10
3
10
4
II
I
VCE (V)
10
10
1
10
2
10
2
10
4
10
3
IC
(A)
IC max
tp =
20
μ
s
1 ms
2 ms
5 ms
10 ms
20 ms
DC
ICM max
δ
= 0.01
BUW12F
BUW12AF
50
μ
s
100
μ
s
200
μ
s
500
μ
s
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