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參數(shù)資料
| 型號(hào)： | BUW12F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大小： | 81K |
| 代理商： | BUW12F |
1997 Aug 14
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUW12F; BUW12AF
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Measured with a half-sinewave voltage (curve tracer).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage I
C
= 100 mA; I
Boff
= 0; L = 25 mH;
BUW12F
BUW12AF
collector-emitter saturation voltage
BUW12F
BUW12AF
base-emitter saturation voltage
BUW12F
BUW12AF
collector-emitter cut-off current
see Figs 8 and 9
400
450
V
V
V
CEsat
I
C
= 6 A; I
B
= 1.2 A; see Figs 6 and 10
I
C
= 5 A; I
B
= 1 A; see Figs 6 and 10
1.5
1.5
V
V
V
BEsat
I
C
= 6 A; I
B
= 1.2 A; see Fig.6
I
C
= 5 A; I
B
= 1 A; see Fig.6
V
CE
= V
CESMmax
; V
BE
= 0; note 1
V
CE
= V
CESMmax
; V
BE
= 0;
T
j
= 125
°
C; note 1
V
EB
= 9 V; I
C
= 0
V
CE
= 5 V; I
C
= 10 mA; see Fig.11
V
CE
= 5 V; I
C
= 1 A; see Fig.11
1.5
1.5
1
3
V
V
mA
mA
I
CES
I
EBO
h
FE
emitter-base cut-off current
DC current gain
10
10
18
20
10
35
35
mA
Switching times resistive load
(see Figs 12 and 13)
t
on
turn-on time
BUW12F
BUW12AF
storage time
BUW12F
BUW12AF
fall time
BUW12F
BUW12AF
I
Con
= 6 A; I
Bon
= I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
= I
Boff
= 1 A
1
1
μ
s
μ
s
t
s
I
Con
= 6 A; I
Bon
= I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
= I
Boff
= 1 A
4
4
μ
s
μ
s
t
f
I
Con
= 6 A; I
Bon
= I
Boff
= 1.2 A
I
Con
= 5 A; I
Bon
= I
Boff
= 1 A
0.8
0.8
μ
s
μ
s
Switching times inductive load
(see Figs 14 and 15)
t
s
storage time
BUW12F
I
Con
= 6 A; I
B
= 1.2 A; V
CL
= 250 V;
T
c
= 100
°
C
I
Con
= 5 A; I
B
= 1 A; V
CL
= 300 V;
T
c
= 100
°
C
1.9
2.5
μ
s
BUW12AF
1.9
2.5
μ
s
t
f
fall time
BUW12F
I
Con
= 6 A; I
B
= 1.2 A; V
CL
= 250 V;
T
c
= 100
°
C
I
Con
= 5 A; I
B
= 1 A; V
CL
= 300 V;
T
c
= 100
°
C
200
300
ns
BUW12AF
200
300
ns
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