- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄381605 > BS62LV2006STI55 (BRILLIANCE SEMICONDUCTOR, INC.) Very Low Power CMOS SRAM 256K X 8 bit PDF資料下載
參數(shù)資料
| 型號(hào)： | BS62LV2006STI55 |
| 廠商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Very Low Power CMOS SRAM 256K X 8 bit |
| 中文描述： | 非常低功耗CMOS SRAM 256K × 8位 |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大?。?/td> | 361K |
| 代理商： | BS62LV2006STI55 |
BS62LV2006
R0201-BS62LV2006
Revision
May.
1.3
2006
5
n
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
READ CYCLE 2
(1,3,4)
READ CYCLE 3
(1, 4)
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V
IL
and CE2= V
IH
.
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = V
IL
.
5. Transition is measured
±
500mV from steady state with C
L
= 5pF.
The parameter is guaranteed but not 100% tested.
t
RC
t
OH
t
AA
D
OUT
ADDRESS
t
OH
t
CLZ
(5)
D
OUT
CE2
CE1
t
ACS2
t
ACS1
t
CHZ1
, t
CHZ2
(5)
t
OH
t
RC
t
OE
t
CLZ2
(5)
t
CHZ2
(2,5)
D
OUT
CE2
CE1
OE
ADDRESS
t
CLZ1
(5)
t
ACS1
t
ACS2
t
CHZ1
t
O(1,5)
(5)
t
OLZ
t
AA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BS62LV2006STI70 | Very Low Power CMOS SRAM 256K X 8 bit |
| BS62LV2006TC55 | Very Low Power CMOS SRAM 256K X 8 bit |
| BS62LV2006TC70 | Very Low Power CMOS SRAM 256K X 8 bit |
| BS62LV2006TI55 | Very Low Power CMOS SRAM 256K X 8 bit |
| BS62LV2006TI70 | Very Low Power CMOS SRAM 256K X 8 bit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS62LV2006STI-55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2006STI70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 256K X 8 bit |
| BS62LV2006STI-70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2006STIG55 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 8 bit |
| BS62LV2006STIG70 | 制造商:BSI 制造商全稱:Brilliance Semiconductor 功能描述:Very Low Power CMOS SRAM 256K X 8 bit |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。