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參數(shù)資料
| 型號(hào)： | bq2013H |
| 廠商： | Benchmark Technology Group |
| 英文描述： | Gas Gauge IC for Power-Assist Applications(應(yīng)用于電源援助的氣體Gauge芯片) |
| 中文描述： | 氣體計(jì)IC，電源輔助應(yīng)用（應(yīng)用于電源援助的氣體計(jì)芯片） |
| 文件頁數(shù)： | 9/24頁 |
| 文件大小： | 195K |
| 代理商： | BQ2013H |
Self-Discharge Compensation
The self-discharge compensation can be programmed for
three different rates.
The rates vary across 8 ranges
from <10°C to >70°C, doubling with each higher tem-
perature step (10°C). See Table 7.
Offset Compensation
The bq2013H uses a voltage to frequency converter to
measure the voltage across a resistor used to monitor
the current into and out of the battery. This converter
has an offset value that can be influenced by the V
supply and the bypassing of this supply. The typical
value found on a well designed PCB is about -75
μ
V. Pro-
gram pin 6 can be used to compensate for this offset, re-
ducing the effective V
OS
. Offset compensation occurs
when V
SRO
< -250
μ
V or V
SRO
> 250
μ
V.
Error Summary
The LMD is susceptible to error on initialization or if no
updates occur. On initialization, the LMD value includes
the error between the programmed full capacity and the
actual capacity. This error is present until a valid dis-
charge occurs and LMD is updated (see the DCR de-
scription in the “Layout Considerations” section). The
other cause of LMD error is battery wear-out. As the
battery ages, the measured capacity must be adjusted to
account for changes in actual battery capacity.
DONE Input
A fast-charge controller IC or micro-controller uses the
DONE input to communicate charge status to the
bq2013H. When the DONE input is asserted high on
fast-charge completion, the bq2013H sets NAC = LMD
and VDQ = 1. The DONE input should be maintained
high as long as the fast-charge controller or
microcontroller keeps the batteries full; otherwise the
pin should be held low.
Communicating With the bq2013
The bq2013H includes a simple single-pin (HDQ plus re-
turn) serial data interface. A host processor uses the inter-
face to access various bq2013H registers. Battery character-
istics may be easily monitored by adding a single contact to
the battery pack. The open-drain HDQ pin on the bq2013H
should be pulled up by the host system, or may be left float-
ingiftheserialinterfaceisnotused.
The interface uses a command-based protocol, where the
host processor sends a command byte to the bq2013H.
The command directs the bq2013H to either store the
next eight bits of data received to a register specified by
the command byte or output the eight bits of data speci-
fied by the command byte. (See Figure 3.)
The communication protocol is asynchronous re-
turn-to-one. Command and data bytes consist of a
stream of eight bits that have a maximum transmission
rate of 5K bits/s. The least-significant bit of a command
or data byte is transmitted first. The protocol is simple
enough that it can be implemented by most host proces-
sors using either polled or interrupt processing. Data
input from the bq2013H may be sampled using the
pulse-width capture timers available on some microcon-
trollers.
If a communication error occurs, e.g., t
> 250
μ
s, the
bq2013H should be sent a BREAK to reinitiate the se-
rial interface. A BREAK is detected when the HDQ pin
is driven to a logic-low state for a time, t
or greater.
The HDQ pin should then be returned to its normal
ready-high logic state for a time, t
. The bq2013H is
now ready to receive a command from the host proces-
sor.
The return-to-one data bit frame consists of three dis-
tinct sections. The first section is used to start the trans-
mission by either the host or the bq2013H taking the
HDQ pin to a logic-low state for a period, t
. The
next section is the actual data transmission, where the
data should be valid by a period, t
, after the nega-
tive edge used to start communication. The data should
be held for a period, t
DH;DV
, to allow the host or bq2013H
to sample the data bit.
The final section is used to stop the transmission by re-
turning the HDQ pin to a logic-high state by at least a
period, t
, after the negative edge used to start com-
munication. The final logic-high state should be until a
period t
, to allow time to ensure that the bit
transmission was stopped properly. The timings for data
and break communication are given in the serial com-
9
bq2013H
Temperature
Range
Self-Discharge Compensation
Typical Rate/Day
PROG
3
= H
PROG
3
= Z
PROG
3
= L
< 10°C
NAC256
NAC512
NAC2048
10–20°C
NAC128
NAC256
NAC1024
20–30°C
NAC64
NAC128
NAC512
30–40°C
NAC32
NAC64
NAC256
40–50°C
NAC16
NAC32
NAC128
50–60°C
NAC8
NAC16
NAC64
60–70°C
NAC4
NAC8
NAC32
> 70°C
NAC2
NAC4
NAC16
Table 7. Self-Discharge Compensation
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BQ2013HEVM-001 | 功能描述:電源管理IC開發(fā)工具 BQ2013H Eval Kit for NiCd 16.8V RoHS:否 制造商:Maxim Integrated 產(chǎn)品:Evaluation Kits 類型:Battery Management 工具用于評(píng)估:MAX17710GB 輸入電壓: 輸出電壓:1.8 V |
| BQ2013HSN | 制造商:TI 制造商全稱:Texas Instruments 功能描述:Gas Gauge IC for Power- Assist Applications |
| BQ2013HSN-A514 | 功能描述:電池管理 NiCd/NiMH/Lead-Acid Gas Gauge RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
| BQ2013HSN-A514 | 制造商:Texas Instruments 功能描述:SEMICONDUCTORS ((NS)) |
| BQ2013HSN-A514G4 | 功能描述:電池管理 NiCd/NiMH/Lead-Acid Gas Gauge RoHS:否 制造商:Texas Instruments 電池類型:Li-Ion 輸出電壓:5 V 輸出電流:4.5 A 工作電源電壓:3.9 V to 17 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:VQFN-24 封裝:Reel |
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