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參數(shù)資料
| 型號(hào)： | BLF1820-90 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC, FM-2 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 107K |
| 代理商： | BLF1820-90 |
2003 Feb 10
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1820-90
FEATURES
Typical 2-tone performance at a supply voltage of 26 V
and I
DQ
of 500 mA:
– Output power = 90 W (PEP)
– Gain = 12 dB
– Efficiency = 32%
– dim =
26 dBc
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (1800 to 2000 MHz)
Internally matched for ease of use.
APPLICATIONS
RF power amplifiers for GSM, EDGE and CDMA base
stations and multicarrier applications in the
1800 to 2000 MHz frequency range.
DESCRIPTION
90 W LDMOS power transistor for base station
applications at frequencies from 1800 to 2000 MHz.
PINNING
PIN
DESCRIPTION
1
2
3
drain
gate
source, connected to flange
handbook, halfpage
Top view
MBK394
1
2
3
Fig.1 Simplified outline SOT502A.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
≤
25
2-tone, class-AB
f
1
= 2000; f
2
= 2000.1
26
90 (PEP)
>11
>30
SYMBOL
PARAMETER
MIN.
65
MAX.
UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
65
±
15
12
+150
200
V
V
A
°
C
°
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF1820-90,112 | 功能描述:射頻MOSFET電源晶體管 BULK TNS-RFPR RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF1820-90,135 | 制造商:NXP Semiconductors 功能描述: |
| BLF1822-10 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power LDMOS transistor |
| BLF1822-10,112 | 功能描述:射頻MOSFET電源晶體管 TRANSISTOR UHF PWR LDMOS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF182XRSU | 功能描述:RF Mosfet LDMOS (Dual), Common Source 50V 100mA 108MHz 28dB 250W 制造商:ampleon usa inc. 系列:- 包裝:托盤 零件狀態(tài):在售 晶體管類型:LDMOS（雙），共源 頻率:108MHz 增益:28dB 電壓 - 測(cè)試:50V 額定電流:- 噪聲系數(shù):- 電流 - 測(cè)試:100mA 功率 - 輸出:250W 電壓 - 額定:135V 封裝/外殼:SOT-1121B 供應(yīng)商器件封裝:- 標(biāo)準(zhǔn)包裝:20 |
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