- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄376497 > BGY241 (NXP SEMICONDUCTORS) UHF amplifier module PDF資料下載
參數(shù)資料
| 型號(hào)： | BGY241 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | UHF amplifier module |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | LEADLESS, PLASTIC, SOT482C, 5 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | BGY241 |
1999 Sep 09
6
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
List of components
(see Fig.10)
Note
1.
The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (
ε
r
= 2.2);
thickness
1
32
inch.
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
C1,C2
C3
C4
Z
1
,Z
2
R1
multilayer ceramic chip capacitor
tantalum capacitor
electrolytic capacitor
stripline; note 1
metal film resistor
680 pF
2.2
μ
F; 35 V
47
μ
F; 40 V
50
100
; 0.6 W
2222 851 11681
2222 030 37479
2322 156 11001
width 2.33 mm
handbook, full pagewidth
MGS656
C3
C2
C4
Z1
C1
R1
RF input
RF output
VC
VS
Z2
Fig.10 Test circuit.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BLF1820-90 | UHF power LDMOS transistor |
| BLV194 | UHF power transistor |
| BRY39 | Programmable unijunction transistor/ Silicon controlled switch |
| BSN254 | N-channel enhancement mode vertical D-MOS transistors |
| BSN254A | N-channel enhancement mode vertical D-MOS transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BGY280 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF amplifier module |
| BGY282 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:dual band UHF amplifier module for GSM900 and GSM1800 |
| BGY284 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 & PCS1900 |
| BGY288 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 and PCS1900 |
| BGY292G/03/N1,135 | 制造商:NXP Semiconductors 功能描述:PHABGY292G/03/N1.135 PWR AMP EOL310309 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。