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參數(shù)資料
| 型號： | BGY241 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | UHF amplifier module |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | LEADLESS, PLASTIC, SOT482C, 5 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 89K |
| 代理商： | BGY241 |
1999 Sep 09
5
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
handbook, halfpage
0
1
2
4
2
1
3
MGS652
3
880 MHz
915 MHz
VSWRin
PL (W)
Fig.6
Input VSWR as a function of load power;
typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 1 mW;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s
handbook, halfpage
H2, H3
(dBc)
880
890
900
920
20
60
80
40
MGS653
910
f (MHz)
H2
H3
Fig.7
Harmonics as a function of frequency;
typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 1 mW; P
L
= 2.5 W;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s.
handbook, halfpage
(W)
0
100
0
1
MGS654
2
3
4
20
40
60
80
Tmb (
°
C)
(2)
(3)
(4)
(1)
Fig.8
Load power as a function of mounting base
temperature; typical values.
Z
S
= Z
L
= 50
; P
D
= 1 mW; V
C
= 2.2 V;
δ
= 1 : 8; t
p
= 575
μ
s.
(1) V
S
= 3.5 V; f = 880 MHz.
(2) V
S
= 3.5 V; f = 915 MHz.
(3) V
S
= 3.1 V; f = 880 MHz.
(4) V
S
= 3.1 V; f = 915 MHz.
handbook, halfpage
AM
(%)
0
10
20
40
0
8
MGS655
30
4
10
6
2
PL (dBm)
880 MHz
915 MHz
Fig.9
Output amplitude modulation as a function
of load power; typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 1 mW; T
mb
= 25
°
C;
f = 100 kHz; input amplitude modulation = 3%;
δ
= 1 : 8; t
p
= 575
μ
s.
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