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參數(shù)資料
| 型號(hào)： | BGY241 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | UHF amplifier module |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | LEADLESS, PLASTIC, SOT482C, 5 |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大小： | 89K |
| 代理商： | BGY241 |
1999 Sep 09
4
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
handbook, halfpage
PL
(W)
1
1.5
2.5
3
1
0
2
MGS648
880 MHz
915 MHz
2
VC (V)
Fig.2
Load power as a function of control voltage;
typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 1 mW;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s.
handbook, halfpage
PL
(W)
2
3
4
6
6
2
0
4
MGS649
5
880 MHz
915 MHz
VS (V)
Fig.3
Load power as a function of supply voltage;
typical values.
Z
S
= Z
L
= 50
; V
C
= 2.2 V; P
D
= 1 mW;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s.
handbook, halfpage
(%)
0
5
0
10
MGS650
20
30
40
1
2
3
4
880 MHz
915 MHz
PL (W)
Fig.4
Efficiency as a function of load power;
typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 1 mW;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s.
handbook, halfpage
(W)
880
890
900
920
910
f (MHz)
0
4
MGS651
3
2
1
Fig.5
Load power as a function of frequency;
typical values.
Z
S
= Z
L
= 50
; V
S
= 3.5 V; P
D
= 1 mW; V
C
= 2.2 V;
T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s.
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