- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376497 > BGY241 (NXP SEMICONDUCTORS) UHF amplifier module PDF資料下載
參數(shù)資料
| 型號： | BGY241 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | UHF amplifier module |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | LEADLESS, PLASTIC, SOT482C, 5 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 89K |
| 代理商： | BGY241 |
1999 Sep 09
2
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
FEATURES
3.5 V nominal supply voltage
35 dBm output power
Easy output power control by DC voltage.
APPLICATIONS
Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
880 to 915 MHz frequency range.
DESCRIPTION
The BGY241 is a three-stage UHF amplifier module in a
SOT482C leadless package with a plastic cover.
The module consists of one NPN silicon planar transistor
die and one bipolar monolithic integrated circuit mounted
together with matching and bias circuit components on a
metallized ceramic substrate.
PINNING - SOT482C
PIN
DESCRIPTION
1
2
3
4
5
RF input
V
C
V
S
RF output
ground
handbook, halfpage
MBK201
Bottom view
4
3
2
5
1
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°
C.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF
OPERATION
Pulsed;
δ
= 1 : 8
f
(MHz)
V
S
(V)
V
C
(V)
≤
2.2
P
L
(dBm)
G
p
(dB)
≥
35.2
η
(%)
Z
S
; Z
L
(
)
50
880 to 915
3.5
35.2
typ. 43
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S
DC supply voltage
V
C
= 0; P
D
= 0 mW
V
C
≥
0.2 V
40
30
7
5.5
2.7
10
36
+100
+100
V
V
V
dBm
dBm
°
C
°
C
V
C
P
D
P
L
T
stg
T
mb
DC control voltage
input drive power
load power
storage temperature
operating mounting base temperature
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BLF1820-90 | UHF power LDMOS transistor |
| BLV194 | UHF power transistor |
| BRY39 | Programmable unijunction transistor/ Silicon controlled switch |
| BSN254 | N-channel enhancement mode vertical D-MOS transistors |
| BSN254A | N-channel enhancement mode vertical D-MOS transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BGY280 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF amplifier module |
| BGY282 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:dual band UHF amplifier module for GSM900 and GSM1800 |
| BGY284 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 & PCS1900 |
| BGY288 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Power amplifier with integrated control loop for GSM850, EGSM900, DCS1800 and PCS1900 |
| BGY292G/03/N1,135 | 制造商:NXP Semiconductors 功能描述:PHABGY292G/03/N1.135 PWR AMP EOL310309 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。