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參數(shù)資料
| 型號： | BGY241 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | UHF amplifier module |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | LEADLESS, PLASTIC, SOT482C, 5 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 89K |
| 代理商： | BGY241 |
1999 Sep 09
3
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
CHARACTERISTICS
Z
S
= Z
L
= 50
; P
D
= 0 dBm; V
S
= 3.5 V; V
C
≤
2.2 V; f = 880 to 915 MHz; T
mb
= 25
°
C;
δ
= 1 : 8; t
p
= 575
μ
s;
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
35.2
33.6
TYP.
6
35.5
MAX.
UNIT
μ
A
mA
mA
dBm
dBm
I
Q
leakage current
V
C
= 0.2 V; P
D
= 0 mW
V
S
= 7 V; V
C
= 0; P
D
= 0 mW
P
L
= 35.2 dBm
V
C
= 2.2 V
V
S
= 3 V; V
C
= 2.2 V;
T
mb
=
20 to +85
°
C
P
L
= 35.2 dBm
P
L
= 34 dBm
P
L
= 35.2 dBm
P
L
= 35.2 dBm
P
L
= 5 to 35 dBm
V
S
= 3 to 5 V; P
D
=
3 to +3 dBm;
V
C
= 0 to 2.2 V; P
L
≤
35.2 dBm;
VSWR
≤
6 : 1 through all phases
V
C
= 0.5 V; P
D
= 3 dBm
10
20
3
I
CM
P
L
peak control current
load power
G
p
η
H
2
H
3
VSWR
in
power gain
efficiency
second harmonic
third harmonic
input VSWR
stability
35
35.2
42
50
53
38
40
3 : 1
60
dB
%
dBc
dBc
dBc
isolation
control bandwidth
control slope
noise power
1.5
43
240
76
37
75
dBm
MHz
dB/V
dBm
P
L
=
5 to +5 dBm
P
L
= 5 to 35.2 dBm;
bandwidth = 100 kHz;
20 MHz above transmitter band
P
D
= 3% AM; f = 100 kHz;
P
L
= 5 to 35.2 dBm
P
D
=
0.5 to +0.5 dBm;
P
L
= 5 to 35.2 dBm
P
L
= 35.2 dBm; f = 915 MHz;
P
L
(925 MHz)/P
D
(905 MHz)
P
L
= 6 to 34 dBm; time to settle within
0.5 dB of final P
L
P
L
= 6 to 34 dBm; time to settle within
0.5 dB of final P
L
V
S
= 5 V; P
L
= 34.8 dBm;
VSWR
≤
12 : 1 through all phases
V
S
= 4.5 V; V
C
= 2.3 V;
VSWR
≤
5 : 1 through all phases
P
n
AM/AM conversion
12
14
%
AM/PM conversion
2
deg
T
X
/R
X
conversion
25
30
dB
t
r
carrier rise time
1.5
2
μ
s
t
f
carrier fall time
1.5
2
μ
s
ruggedness
no degradation
no degradation
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