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參數(shù)資料
| 型號： | BD616LV4017DIG70 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的256 × 16位 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 265K |
| 代理商： | BD616LV4017DIG70 |
Revision 2.1
Jan. 2004
3
C
IN
Input
Capacitance
Input/Output
Capacitance
V
IN
=0V
6
pF
C
DQ
V
I/O
=0V
8
pF
RANGE
AMBIENT
TEMPERATURE
Vcc
Commercial
0
O
C to +70
O
C
2.4V ~ 5.5V
Industrial
-40
O
C to +85
O
C
2.4V ~ 5.5V
1. Typical characteristics are at T
A
= 25
o
C.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
RC
.
4. Icc
SB1_MAX.
is 5uA/30uA at Vcc=3.0V/5.0V and T
A
=70
o
C.
5. Icc_
MAX
. is 27mA(@3.0V)/65mA(@5.0V) under 55ns operation.
ABSOLUTE MAXIMUM RATINGS
(1)
OPERATING RANGE
CAPACITANCE
(1)
(TA = 25
o
C, f = 1.0 MHz)
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
DC ELECTRICAL CHARACTERISTICS
( TA = -40 to + 85
o
C )
PARAMETER
NAME
1. This parameter is guaranteed and not 100% tested.
SYMBOL
PARAMETER
RATING
UNITS
V
TERM
Terminal
Respect to GND
Voltage
with
-0.5 to
Vcc+0.5
V
T
BIAS
Temperature Under Bias
-40 to +85
O
C
T
STG
Storage Temperature
-60 to +150
O
C
P
T
Power Dissipation
1.0
W
I
OUT
DC Output Current
20
mA
BSI
BS616LV4017
PARAMETER
TEST CONDITIONS
MIN. TYP.
(1)
MAX.
UNITS
Vcc=3.0V
0.8
V
IL
Guaranteed Input Low
Voltage
(2)
-0.5
--
V
Vcc=3.0V
2.0
V
IH
Guaranteed Input High
Voltage
(2)
--
Vcc+0.3
V
I
IL
Input Leakage Current
Vcc = Max, V
IN
= 0V to Vcc
--
--
1
uA
I
LO
Output Leakage Current
Vcc = Max, CE = V
IH
, or OE = V
IH
V
I/O
= 0V to Vcc
--
--
1
uA
Vcc=3.0V
V
OL
Output Low Voltage
--
--
V
Vcc=3.0V
V
OH
Output High Voltage
--
--
V
Vcc=3.0V
22
I
CC
Operating Power
Supply Current
CE=V
IL
,I
DQ
= 0mA,
(3)
F=Fmax
--
--
mA
Vcc=3.0V
0.5
I
CCSB
Standby Current-TTL
CE = V
IH
, I
DQ
= 0mA
--
--
mA
Vcc=3.0V
0.45
10
I
CCSB1
Standby Current-CMOS
CE
≧
Vcc-0.2V,
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
--
uA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R0201-BS616LV4017
2.0
60
Vcc=5.0V
55
Vcc=5.0V
2.2
Vcc=5.0V
Vcc=5.0V
Vcc=5.0V
Vcc=5.0V
Vcc=5.0V
0.8
2.4
1.0
0.4
2.4
Vcc = Max, I
OL
= 2.0mA
Vcc = Min, I
OH
= -1.0mA
(4)
0.4
70ns
70ns
(5)
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