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參數(shù)資料
| 型號(hào)： | BD616LV4017DIG70 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
| 中文描述： | 非常低功率/電壓CMOS SRAM的256 × 16位 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 265K |
| 代理商： | BD616LV4017DIG70 |
Revision 2.1
Jan. 2004
2
R0201-BS616LV4017
Name
Function
A0-A17 Address Input
These 18 address inputs select one of the 262,144 x 16-bit words in the RAM.
CE Chip Enable Input
CE is active LOW. Chip enables must be active when data read from or write to the
device. if chip enable is not active, the device is deselected and is in a standby power
mode. The DQ pins will be in the high impedance state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
Lower byte and upper byte data input/output control pins.
WE Write Enable Input
OE Output Enable Input
LB and UB Data Byte Control Input
DQ0 - DQ15 Data Input/Output
Ports
These 16 bi-directional ports are used to read data from or write data into the RAM.
Vcc
Power Supply
Gnd
Ground
TRUTH TABLE
PIN DESCRIPTIONS
BSI
BS616LV4017
MODE
Not selected
(Power Down)
CE
H
X
WE
X
X
X
OE
X
X
X
LB
X
H
H
UB
X
H
H
D0~D7
High Z
High Z
High Z
D8~D15
High Z
High Z
High Z
Vcc CURRENT
I
CCSB
, I
CCSB1
I
CCSB
, I
CCSB1
I
CC
Output Disabled
L
H
H
X
L
H
L
L
H
L
X
L
L
H
L
L
H
High Z
Dout
High Z
Dout
Din
X
Din
High Z
Dout
Dout
High Z
Din
Din
X
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
I
CC
Read
L
H
L
Write
L
L
X
L
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|---|---|
| BD616LV4017DIP55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
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