參數(shù)資料
型號： ATTINY2313A-SUR
廠商： Atmel
文件頁數(shù)： 86/172頁
文件大?。?/td> 0K
描述： MCU AVR 2KB FLASH 20MHZ 20SOIC
產(chǎn)品培訓模塊： tinyAVR Introduction
標準包裝： 1,000
系列： AVR® ATtiny
核心處理器： AVR
芯體尺寸： 8-位
速度： 20MHz
連通性： I²C，SPI，UART/USART
外圍設(shè)備： 欠壓檢測/復位，POR，PWM，WDT
輸入/輸出數(shù)： 18
程序存儲器容量： 2KB（1K x 16）
程序存儲器類型： 閃存
EEPROM 大?。?/td> 128 x 8
RAM 容量： 128 x 8
電壓 - 電源 (Vcc/Vdd)： 1.8 V ~ 5.5 V
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 85°C
封裝/外殼： 20-SOIC（0.295"，7.50mm 寬）
包裝： 帶卷 (TR)
其它名稱： ATTINY2313A-SUR-ND
20
8246B–AVR–09/11
ATtiny2313A/4313
5.3.3
Erase
In order to prevent unintentional EEPROM writes, a specific procedure must be followed to
erase memory locations. To erase an EEPROM memory location follow the procedure below:
Poll the EEPROM Program Enable bit (EEPE) in EEPROM Control Register (EECR) to make
sure no other EEPROM operations are in process. If set, wait to clear.
Set mode of programming to erase by writing EEPROM Programming Mode bits (EEPM0
and EEPM1) in EEPROM Control Register (EECR).
Write target address to EEPROM Address Registers (EEARH/EEARL).
Enable erase by setting EEPROM Master Program Enable (EEMPE) in EEPROM Control
Register (EECR). Within four clock cycles, start the erase operation by setting the EEPROM
Program Enable bit (EEPE) in the EEPROM Control Register (EECR). During the erase
operation, the CPU is halted for two clock cycles before executing the next instruction.
The EEPE bit remains set until the erase operation has completed. While the device is busy pro-
gramming, it is not possible to perform any other EEPROM operations.
5.3.4
Write
In order to prevent unintentional EEPROM writes, a specific procedure must be followed to write
to memory locations.
Before writing data to EEPROM the target location must be erased. This can be done either in
the same operation or as part of a split operation. Writing to an unerased EEPROM location will
result in corrupted data.
To write an EEPROM memory location follow the procedure below:
Poll the EEPROM Program Enable bit (EEPE) in EEPROM Control Register (EECR) to make
sure no other EEPROM operations are in process. If set, wait to clear.
Set mode of programming by writing EEPROM Programming Mode bits (EEPM0 and
EEPM1) in EEPROM Control Register (EECR). Alternatively, data can be written in one
operation or the write procedure can be split up in erase, only, and write, only.
Write target address to EEPROM Address Registers (EEARH/EEARL).
Write target data to EEPROM Data Register (EEDR).
Enable write by setting EEPROM Master Program Enable (EEMPE) in EEPROM Control
Register (EECR). Within four clock cycles, start the write operation by setting the EEPROM
Program Enable bit (EEPE) in the EEPROM Control Register (EECR). During the write
operation, the CPU is halted for two clock cycles before executing the next instruction.
The EEPE bit remains set until the write operation has completed. While the device is busy with
programming, it is not possible to do any other EEPROM operations.
5.3.5
Preventing EEPROM Corruption
During periods of low V
CC, the EEPROM data can be corrupted because the supply voltage is
too low for the CPU and the EEPROM to operate properly. These issues are the same as for
board level systems using EEPROM, and the same design solutions should be applied.
At low supply voltages data in EEPROM can be corrupted in two ways:
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