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參數(shù)資料
| 型號(hào)： | AND8020 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | Termination of ECL Logic Devices with EF (Emitter Follower) OUTPUT Structure |
| 中文描述： | ECL邏輯器件的終止與英法（發(fā)射極跟隨器）輸出結(jié)構(gòu) |
| 文件頁(yè)數(shù)： | 14/18頁(yè) |
| 文件大?。?/td> | 168K |
| 代理商： | AND8020 |
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AND8020/D
http://onsemi.com
14
SECTION 5. DIODE TERMINATION
V
BB
V
BB
Driver
Receiver
*All Media
*
*
D1
D2
D1
D2
Alternative to the resistor network termination schemes,
a Diode method shown in Figure 19 may afford certain
advantages when a design has the following constraints.
1. Impedance controlled media line is not required
(coax, twisted pair, striplines, etc.)
2. Impedance matched termination network is not
required.
3. Overshoot and Noise need to be clamped to logic
HIGH/LOW levels.
Figure 19. Diode Termination
V
BB
V
BB
Driver
Receiver
*All Media
*
*
D1
D2
D1
D2
V
BB
Driver
Receiver
*All Media
*
D1
D2
D1 and D2 diodes may be an MBD301, MMBD301,
MBD701, MMBD701LT1, or a dual package MMBD452LT1.
Diode forward voltage curves from a data sheet, such as shown
in Figure 20, will determine specific current and voltage
operation range. Frequency limitations may be a consideration
when selecting the diodes. The Silicon HotCarrier Schottky
Barrier diode MBD701, for example, displays a forward V
f
of
about 0.55 V and an I
f
of about 11 mA (at 25
°
C) to match a
50
impedance line. At higher temperatures, the current
decreases.
Figure 20. MMBD701 Diode Forward Voltage
0.1
1.0
10
100
0
0.2
0.4
0.8
1.2
1.6
2.0
I
F
,
V
F
, FORWARD VOLTAGE (V)
T
A
= 85
°
C
T
A
=40
°
C
T
A
= 25
°
C
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