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參數(shù)資料
| 型號(hào)： | AM45DL3208G |
| 廠商： | Advanced Micro Devices, Inc. |
| 元件分類： | SRAM |
| 英文描述： | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| 中文描述： | 堆疊式多芯片封裝（MCP）閃存和SRAM |
| 文件頁(yè)數(shù)： | 58/66頁(yè) |
| 文件大?。?/td> | 1196K |
| 代理商： | AM45DL3208G |
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56
Am45DL3208G
March 12, 2004
P R E L I M I N A R Y
Pseudo SRAM AC CHARACTERISTICS
Read Cycle
Notes:
1. WE# = V
IH
, if CIOs is low, ignore UB#s/LB#s timing.
2. t
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output
voltage levels.
3. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
(Min.) both for a given device and from device to device
interconnection.
4. Do not access device with cycle timing shorter than t
RC
for continuous periods < 10 μs.
Figure 30.
Pseudo SRAM Read Cycle
Data Valid
High-Z
t
RC
CE#1s
Address
OE#
Data Out
t
OH
t
AA
t
CO1
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
HZ
CE2s
t
CO2
相關(guān)PDF資料 |
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| AM45DL3208GB70IS | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM45DL3208GB70IT | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM45DL3208GB85IS | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM45DL3208GB85IT | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM45DL3208GT70IS | Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM45DL3208GB70IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM45DL3208GB70IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM45DL3208GB85IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM45DL3208GB85IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| AM45DL3208GT70IS | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
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