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參數(shù)資料
| 型號： | AM29SL800CB-100ED |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 512K X 16 FLASH 1.8V PROM, 100 ns, PDSO48 |
| 封裝： | MO-142DD, TSOP-48 |
| 文件頁數(shù)： | 43/43頁 |
| 文件大?。?/td> | 960K |
| 代理商： | AM29SL800CB-100ED |
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9
DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is composed of latches that store the
commands, along with the address and data informa-
tion needed to execute the command. The contents of
the register serve as inputs to the internal state
machine. The state machine outputs dictate the func-
tion of the device. Table 1 lists the device bus
operations, the inputs and control levels they require,
and the resulting output. The following subsections
describe each of these operations in further detail.
Table 1.
Am29SL800C Device Bus Operations
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 10 ± 1.0 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. Addresses are A18:A0 in word mode (BYTE# = VIH), A18:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector
Protection/Unprotection” section.
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O
pins DQ15–DQ0 operate in the byte or word configura-
tion. If the BYTE# pin is set at logic ‘1’, the device is in
word configuration, DQ15–DQ0 are active and con-
trolled by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are
active and controlled by CE# and OE#. The data I/O
pins DQ8–DQ14 are tri-stated, and the DQ15 pin is
used as an input for the LSB (A-1) address function.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output
control and gates array data to the output pins. WE#
should remain at VIH. The BYTE# pin determines
whether the device outputs array data in words or
bytes.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No
command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert
valid addresses on the device address inputs produce
valid data on the device data outputs. The device
remains enabled for read access until the command
register contents are altered.
See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifica-
DC Characteristics table represents the active current
specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
Operation
CE#
OE# WE# RESET#
Addresses
DQ0–
DQ7
DQ8–DQ15
BYTE#
= VIH
BYTE#
= VIL
Read
L
H
AIN
DOUT
DQ8–DQ14 = High-Z,
DQ15 = A-1
Write
L
H
L
H
AIN
DIN
Standby
VCC ±
0.2 V
XX
VCC ±
0.2 V
X
High-Z
Output Disable
L
H
X
High-Z
Reset
X
L
X
High-Z
Sector Protect (Note 2)
L
H
L
VID
Sector Address,
A6 = L, A1 = H,
A0 = L
DIN
XX
Sector Unprotect (Note 2)
L
H
L
VID
Sector Address,
A6 = H, A1 = H,
A0 = L
DIN
XX
Temporary Sector Unprotect
X
VID
AIN
DIN
High-Z
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