參數(shù)資料
型號(hào): AM29LV2562ML120RPII
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
中文描述: 16M X 32 FLASH 3V PROM, 120 ns, PBGA80
封裝: 18 X 12 MM, FBGA-80
文件頁(yè)數(shù): 61/69頁(yè)
文件大?。?/td> 1451K
代理商: AM29LV2562ML120RPII
October 9, 2003
Am29LV2562M
59
P R E L I M I N A R Y
AC CHARACTERISTICS
Temporary Sector Unprotect
Note:
1. Not 100% tested.
2. AC specifications listed are tested with V
IO
= V
CC
. Contact AMD for information on AC operation when V
IO
V
CC
Parameter
All Speed Options
JEDEC
Std
Description
Unit
t
VIDR
V
ID
Rise and Fall Time (See Note)
Min
500
ns
t
RSP
RESET# Setup Time for Temporary Sector
Unprotect
Min
4
μs
RESET#
t
VIDR
V
ID
V
SS
, V
IL
,
or V
IH
V
ID
V
SS
, V
IL
,
or V
IH
CE#
WE#
RY/BY#
t
VIDR
t
RSP
Program or Erase Command Sequence
t
RRB
Figure 22.
Temporary Sector Group Unprotect Timing Diagram
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Am29PDL128G70 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
Am29PDL128G70R 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
Am29PDL128G80 128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Read/ Write Flash Memory with VersatileIO Control
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