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參數(shù)資料
| 型號： | AM29LV2562ML120RPII |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
| 中文描述： | 16M X 32 FLASH 3V PROM, 120 ns, PBGA80 |
| 封裝： | 18 X 12 MM, FBGA-80 |
| 文件頁數(shù)： | 33/69頁 |
| 文件大?。?/td> | 1451K |
| 代理商： | AM29LV2562ML120RPII |
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October 9, 2003
Am29LV2562M
31
P R E L I M I N A R Y
Table 8.
Device Geometry Definition
Addresses (x16)
Data
Description
27h
00001919h
Device Size = 2
N
byte
28h
29h
00000202h
00000000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
00000505h
00000000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
00000101h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
0101FFFFh
00000101h
00000000h
00000101h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
00000000h
00000000h
00000000h
00000000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
00000000h
00000000h
00000000h
00000000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
00000000h
00000000h
00000000h
00000000h
Erase Block Region 4 Information (refer to CFI publication 100)
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