參數(shù)資料
型號(hào)： AM29LV2562ML120RPII
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
中文描述： 16M X 32 FLASH 3V PROM, 120 ns, PBGA80
封裝： 18 X 12 MM, FBGA-80
文件頁(yè)數(shù)： 41/69頁(yè)
文件大小： 1451K
代理商： AM29LV2562ML120RPII
October 9, 2003
Am29LV2562M
39
P R E L I M I N A R Y
The system can monitor DQ3 and DQ11 to determine
if the sector erase timer has timed out (See the section
on DQ3 and DQ11: Sector Erase Timer.). The time-out
begins from the rising edge of the final WE# pulse in
the command sequence.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses
are no longer latched. Note that while the Embedded
Erase operation is in progress, the system can read
data from the non-erasing sector. The system can de-
termine the status of the erase operation by reading
DQ7 and DQ15, DQ6 and DQ14, or DQ2 and DQ10 in
the erasing sector. Refer to the Write Operation Status
section for information on these status bits.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other com-
mands are ignored. However, note that a
hardware
reset
immediately
terminates the erase operation. If
that occurs, the sector erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
Figure illustrates the algorithm for the erase opera-
tion. Refer to the Erase and Program Operations ta-
bles in the AC Characteristics section for parameters,
and Figure 18 section for timing diagrams.
r
Erase Suspend/Erase Resume
Commands
The Erase Suspend command, B0h, allows the sys-
tem to interrupt a sector erase operation and then read
data from, or program data to, any sector not selected
for erasure. This command is valid only during the sec-
tor erase operation, including the 50 μs time-out pe-
riod during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program
algorithm.
When the Erase Suspend command is written during
the sector erase operation, the device requires a typi-
cal of 5 μs (maximum of 20 μs) to suspend the erase
operation. However, when the Erase Suspend com-
mand is written during the sector erase time-out, the
device immediately terminates the time-out period and
suspends the erase operation.
After the erase operation has been suspended, the
device enters the erase-suspend-read mode. The sys-
tem can read data from or program data to any sector
not selected for erasure. (The device “erase sus-
pends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors pro-
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Tables
10
and
11
for program command sequence.
2. See the section on DQ3 and DQ10 for information on
the sector erase timer.
Figure 7.
Erase Operation
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